PRODUCT DIRECTORY

FETs, MOSFETs

Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
STWA65N045M9 STMicroelectronics

STWA65N045M9

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

4,116 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 45mOhm @ 28A, 10V 4.2V @ 250µA 80 nC @ 10 V ±30V 4610 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
SCT070W120G3-4 STMicroelectronics

SCT070W120G3-4

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

9,992 -
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
IGLT65R045D2ATMA1 Infineon Technologies

IGLT65R045D2ATMA1

IGLT65R045D2ATMA1

Infineon Technologies

3,613 -
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 38A (Tc) - - 1.6V @ 3.3mA 6 nC @ 3 V -10V 430 pF @ 400 V - 124W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
IMZC120R034M2HXKSA1 Infineon Technologies

IMZC120R034M2HXKSA1

IMZC120R034M2HXKSA1

Infineon Technologies

2,087 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 15V, 18V 34mOhm @ 20A, 18V 5.1V @ 6.4mA 45 nC @ 18 V +23V, -7V 1510 pF @ 800 V - 244W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IGOT65R045D2AUMA1 Infineon Technologies

IGOT65R045D2AUMA1

IGOT65R045D2AUMA1

Infineon Technologies

5,599 -
Datasheet CoolGaN™ 20-BFSOP (0.295", 7.50mm Width) Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 34A (Tc) - - 1.6V @ 3.3mA 6 nC @ 3 V -10V 430 pF @ 400 V - 109W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-91
NVBG032N065M3S onsemi

NVBG032N065M3S

SIC MOS D2PAK-7L 32MOHM 650V M3S

onsemi

3,733 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 52A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1409 pF @ 400 V - 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
IMLT65R026M2HXTMA1 Infineon Technologies

IMLT65R026M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,869 -
Datasheet CoolSiC™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 82A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 365W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-6
DMWSH120H90SM3Q Diodes Incorporated

DMWSH120H90SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

2,149 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 97.5mOhm @ 20A, 15V 3.5V @ 5mA 50.9 nC @ 15 V +19V, -8V 1090 pF @ 1000 V - 246W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
SCT070H120G3AG STMicroelectronics

SCT070H120G3AG

H2PAK-7

STMicroelectronics

9,135 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 37 nC @ 18 V +18V, -5V 900 pF @ 850 V - 223W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
DIF120SIC053 Diotec Semiconductor

DIF120SIC053

SIC MOSFET, TO-247-4L, N, 65A, 1

Diotec Semiconductor

5,228 -
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 65A (Tc) 18V 53mOhm @ 33A, 18V 4V @ 9.5mA 121 nC @ 15 V +18V, -4V 2070 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
PJMH042N60FRC_T0_00201 Panjit International Inc.

PJMH042N60FRC_T0_00201

600V 42mohm 69A SJ MOSFET

Panjit International Inc.

4,737 -
Datasheet - - Tube Active - - - - - - - - - - - - - - - - -
IGLT65R035D2ATMA1 Infineon Technologies

IGLT65R035D2ATMA1

IGLT65R035D2ATMA1

Infineon Technologies

6,000 -
Datasheet CoolGaN™ 16-PowerSOP Module Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 47A (Tc) - - 1.6V @ 4.2mA 7.7 nC @ 3 V -10V 540 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-16-8
G3F33MT06L-TR GeneSiC Semiconductor

G3F33MT06L-TR

650V 27M TO-LL G3F SIC MOSFET

GeneSiC Semiconductor

5,791 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 90A (Tc) 15V, 18V 38mOhm @ 26A, 18V 4.3V @ 12mA 81 nC @ 18 V +22V, -10V 2394 pF @ 400 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TOLL
IGOT65R035D2AUMA1 Infineon Technologies

IGOT65R035D2AUMA1

IGOT65R035D2AUMA1

Infineon Technologies

8,956 -
Datasheet CoolGaN™ 20-BFSOP (0.295", 7.50mm Width) Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 44A (Tc) - - 1.6V @ 4.2mA - -10V 540 pF @ 400 V - 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-91
IPQC60R017S7AXTMA1 Infineon Technologies

IPQC60R017S7AXTMA1

MOSFET

Infineon Technologies

9,407 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IMZA65R026M2HXKSA1 Infineon Technologies

IMZA65R026M2HXKSA1

IMZA65R026M2HXKSA1

Infineon Technologies

2,166 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 64A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
SCT070W120G3-4AG STMicroelectronics

SCT070W120G3-4AG

TO247-4

STMicroelectronics

4,612 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 41 nC @ 18 V +18V, -5V 900 pF @ 850 V - 236W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
SCT070HU120G3AG STMicroelectronics

SCT070HU120G3AG

HU3PAK

STMicroelectronics

6,560 -
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 15V, 18V 87mOhm @ 15A, 18V 4.2V @ 1mA 37 nC @ 18 V +22V, -10V 900 pF @ 850 V - 223W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount HU3PAK
E3M0120090J-TR Wolfspeed, Inc.

E3M0120090J-TR

SIC, MOSFET, 120M, 900V, TO-263-

Wolfspeed, Inc.

8,967 -
Datasheet E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 18 nC @ 15 V +15V, -4V 414 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7
IMT65R022M1HXUMA1 Infineon Technologies

IMT65R022M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

7,152 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
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FETs, MOSFETs FAQ

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