FETs, MOSFETs
Browse available FETs, MOSFETs components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMWSH120H43SM3SIC MOSFET BVDSS: >1000V TO247 T |
6,863 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72.7A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 105 nC @ 15 V | +19V, -8V | 2187 pF @ 1000 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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DMWSH120H43SM4SIC MOSFET BVDSS: >1000V TO247-4 |
2,860 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 72.7A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 105 nC @ 15 V | +19V, -8V | 2187 pF @ 1000 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040W120G3-4SILICON CARBIDE POWER MOSFET 120 |
7,708 | - |
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Datasheet | * | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IGOT65R025D2AUMA1IGOT65R025D2AUMA1 |
3,963 | - |
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Datasheet | CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 61A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
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IGLT65R025D2AUMA1IGLT65R025D2AUMA1 |
2,691 | - |
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Datasheet | CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 67A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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SCTWA40N120G2VDISCRETE |
7,567 | - |
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Datasheet | - | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +18V, -5V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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SCTWA40N120G2V-4DISCRETE |
3,763 | - |
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Datasheet | - | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +18V, -5V | 1233 pF @ 800 V | - | 277W (Tc) | -55°C ~ 200°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCT040H120G3AGH2PAK-7 |
2,115 | - |
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Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | 4.2V @ 5mA | 54 nC @ 18 V | +18V, -5V | 1329 pF @ 800 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCT040HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
5,288 | - |
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Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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S3M0025120DMOSFET SILICON CARBIDE SIC 1200V |
2,092 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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G3F25MT06L-TR650V 20M TO-LL G3F SIC MOSFET |
8,600 | - |
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Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 125A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
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DIF065SIC030SIC MOSFET, TO-247-4L, N, 105A, |
2,722 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 105A (Tc) | 18V | 30mOhm @ 75A, 18V | 4V @ 23.5mA | 145 nC @ 18 V | +18V, -4V | 3300 pF @ 600 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SCTWA40N12G24AGTO247-4 |
9,812 | - |
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Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 290W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW170SIC049SIC MOSFET, TO-247-3L, N, 67A, 1 |
6,892 | - |
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Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1700 V | 67A (Tc) | 18V | 49mOhm @ 40A, 18V | 4V @ 15mA | 179 nC @ 18 V | +18V, -4V | 3046 pF @ 1000 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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MXP120A045FW-GE3SILICON CARBIDE MOSFET |
3,025 | - |
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Datasheet | MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 49A (Tc) | 18V, 20V | 56mOhm @ 20A, 20V | 2.38V @ 5mA | 75.6 nC @ 18 V | +22V, -10V | 1958 pF @ 800 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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MXP120A045FL-GE3SILICON CARBIDE MOSFET |
8,452 | - |
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Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPQC60T010S7XTMA1HIGH POWER_NEW |
7,182 | - |
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Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-101 |
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SCT025H120G3-7SILICON CARBIDE POWER MOSFET 120 |
8,556 | - |
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Datasheet | * | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFR32N80Q3MOSFET N-CH 800V 24A ISOPLUS247 |
3,235 | - |
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Datasheet | HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 24A (Tc) | 10V | 300mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 6940 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IPDQ60T010S7XTMA1HIGH POWER_NEW |
4,509 | - |
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Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
FETs, MOSFETs FAQ
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