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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDP20E65D2XKSA1 Infineon Technologies

IDP20E65D2XKSA1

DIODE GP 650V 40A TO220-2-1

Infineon Technologies

460 -
Datasheet - TO-220-2 Tube Active Standard 650 V 40A 2.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 40 µA @ 650 V - - - Through Hole PG-TO220-2-1 -40°C ~ 175°C
IDK04G65C5XTMA2 Infineon Technologies

IDK04G65C5XTMA2

DIODE SIL CARB 650V 4A TO263-2

Infineon Technologies

803 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 670 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
IDP18E120XKSA1 Infineon Technologies

IDP18E120XKSA1

DIODE GP 1.2KV 31A TO220-2-2

Infineon Technologies

423 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 31A 2.15 V @ 18 A Fast Recovery =< 500ns, > 200mA (Io) 195 ns 100 µA @ 1200 V - - - Through Hole PG-TO220-2-2 -55°C ~ 150°C
IDP08E65D2XKSA1 Infineon Technologies

IDP08E65D2XKSA1

DIODE GEN PURP 650V 8A TO220-2

Infineon Technologies

2 -
Datasheet - TO-220-2 Bulk Active Standard 650 V 8A 2.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 40 µA @ 650 V - - - Through Hole TO-220-2 -40°C ~ 175°C
IDL06G65C5XUMA2 Infineon Technologies

IDL06G65C5XUMA2

DIODE SIL CARBIDE 650V 6A VSON-4

Infineon Technologies

2,908 -
Datasheet CoolSiC™+ 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount PG-VSON-4 -55°C ~ 150°C
IDK05G120C5XTMA1 Infineon Technologies

IDK05G120C5XTMA1

DIODE SIC 1.2KV 19.1A TO263-1

Infineon Technologies

955 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 19.1A 1.8 V @ 5 A No Recovery Time > 500mA (Io) - 33 µA @ 1200 V 301pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
IDDD10G65C6XTMA1 Infineon Technologies

IDDD10G65C6XTMA1

DIODE SIL CARB 650V 29A HDSOP-10

Infineon Technologies

1,323 -
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 29A - No Recovery Time > 500mA (Io) 0 ns 33 µA @ 420 V 495pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
IDW10G65C5XKSA1 Infineon Technologies

IDW10G65C5XKSA1

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

232 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
IDD08SG60CXTMA2 Infineon Technologies

IDD08SG60CXTMA2

DIODE SIL CARB 600V 8A TO252-3

Infineon Technologies

178 -
Datasheet CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Surface Mount PG-TO252-3 -55°C ~ 175°C
IDH10SG60CXKSA2 Infineon Technologies

IDH10SG60CXKSA2

DIODE SIL CARB 600V 10A TO220-1

Infineon Technologies

330 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 10A 2.1 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 600 V 290pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
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Single Diodes FAQ

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