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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
AIDK08S65C5ATMA1 Infineon Technologies

AIDK08S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

188 -
Datasheet CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 248pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
AIDK12S65C5ATMA1 Infineon Technologies

AIDK12S65C5ATMA1

DISCRETE DIODES

Infineon Technologies

757 -
Datasheet CoolSiC™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 363pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount PG-TO263-2 -40°C ~ 175°C
IDW16G65C5XKSA1 Infineon Technologies

IDW16G65C5XKSA1

DIODE SIL CARB 650V 16A TO247-3

Infineon Technologies

257 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
IDW20G65C5BXKSA2 Infineon Technologies

IDW20G65C5BXKSA2

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

122 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
56DN06B02ELEMXPSA1 Infineon Technologies

56DN06B02ELEMXPSA1

DIODE GP 600V 11140A E-EUPEC-0

Infineon Technologies

5 -
Datasheet - DO-200AB, B-PUK Bulk Active Standard 600 V 11140A 940 mV @ 8000 A Standard Recovery >500ns, > 200mA (Io) - 60 mA @ 600 V - - - Clamp On E-EUPEC-0 180°C (Max)
BAS70E6433HTMA1 Infineon Technologies

BAS70E6433HTMA1

DIODE SCHOTTKY 70V 70MA SOT23

Infineon Technologies

29,945 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 70 V 70mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed 100 ps 100 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount PG-SOT23 -55°C ~ 125°C
BAT60BE6359HTMA1 Infineon Technologies

BAT60BE6359HTMA1

DIODE SCHOTTKY 10V 3A SOD323-2

Infineon Technologies

9,336 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Schottky 10 V 3A 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 8 V 25pF @ 5V, 1MHz Automotive AEC-Q101 Surface Mount PG-SOD323-2 150°C
IDW15E65D2FKSA1 Infineon Technologies

IDW15E65D2FKSA1

DIODE GP 650V 30A TO247-3-1

Infineon Technologies

219 -
Datasheet - TO-247-3 Tube Active Standard 650 V 30A 2.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 47 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
IDW50E60FKSA1 Infineon Technologies

IDW50E60FKSA1

DIODE GEN PURP 600V 80A TO247-3

Infineon Technologies

240 -
Datasheet - TO-247-3 Tube Active Standard 600 V 80A 2 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
IDW30E60FKSA1 Infineon Technologies

IDW30E60FKSA1

DIODE GEN PURP 600V 60A TO247-3

Infineon Technologies

179 -
Datasheet - TO-247-3 Tube Active Standard 600 V 60A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 143 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
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