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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDK02G120C5XTMA1 Infineon Technologies

IDK02G120C5XTMA1

DIODE SIC 1.2KV 11.8A TO263-1

Infineon Technologies

688 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 11.8A 1.65 V @ 2 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 182pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
IDW40E65D1FKSA1 Infineon Technologies

IDW40E65D1FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

110 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 129 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
IDH06G65C5XKSA2 Infineon Technologies

IDH06G65C5XKSA2

DIODE SIL CARB 650V 6A TO220-2-1

Infineon Technologies

1,287 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDW40E65D2FKSA1 Infineon Technologies

IDW40E65D2FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

2,289 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 2.3 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
IDW75E60FKSA1 Infineon Technologies

IDW75E60FKSA1

DIODE GP 600V 120A TO247-3-1

Infineon Technologies

454 -
Datasheet - TO-247-3 Tube Active Standard 600 V 120A 2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 121 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
IDDD08G65C6XTMA1 Infineon Technologies

IDDD08G65C6XTMA1

DIODE SIL CARB 650V 24A HDSOP-10

Infineon Technologies

1,875 -
Datasheet CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 24A - No Recovery Time > 500mA (Io) 0 ns 27 µA @ 420 V 401pF @ 1V, 1MHz - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
IDH08G120C5XKSA1 Infineon Technologies

IDH08G120C5XKSA1

DIODE SIL CARB 1.2KV TO220-1

Infineon Technologies

285 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDH08SG60CXKSA2 Infineon Technologies

IDH08SG60CXKSA2

DIODE SIL CARB 600V 8A TO220-2-1

Infineon Technologies

1,662 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
IDK10G120C5XTMA1 Infineon Technologies

IDK10G120C5XTMA1

DIODE SIC 1.2KV 31.9A TO263-1

Infineon Technologies

835 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 31.9A 1.8 V @ 10 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 525pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
IDW12G65C5XKSA1 Infineon Technologies

IDW12G65C5XKSA1

DIODE SIL CARB 650V 12A TO247-3

Infineon Technologies

268 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 190 µA @ 650 V 360pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
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Single Diodes FAQ

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