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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
IDW32G65C5BXKSA2 Infineon Technologies

IDW32G65C5BXKSA2

DIODE SIL CARB 650V 16A TO247-3

Infineon Technologies

230 -
Datasheet CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 470pF @ 1V, 1MHz - - Through Hole PG-TO247-3 -55°C ~ 175°C
IDWD25G200C5XKSA1 Infineon Technologies

IDWD25G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 77A 1.75 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 375 µA @ 2 kV 2850pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
IDWD40G200C5XKSA1 Infineon Technologies

IDWD40G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 114A 1.75 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 2 kV 4550pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
IDWD50G200C5XKSA1 Infineon Technologies

IDWD50G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 140A 1.75 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 750 µA @ 2 kV 5700pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
IDYH80G200C5XKSA1 Infineon Technologies

IDYH80G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Variant Tube Active SiC (Silicon Carbide) Schottky 2000 V 157A 1.75 V @ 80 A - - 1.2 A @ 2000 V 9100pF @ 1V, 100kHz - - Through Hole PG-TO247-U04 -55°C ~ 175°C
IDWD80G200C5XKSA1 Infineon Technologies

IDWD80G200C5XKSA1

SIC DISCRETE

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 2000 V 214A 1.75 V @ 80 A No Recovery Time > 500mA (Io) 0 ns 1.2 mA @ 2 kV 9100pF @ 1V, 100kHz - - Through Hole PG-TO247-2-U01 -55°C ~ 175°C
BAS16B5003 Infineon Technologies

BAS16B5003

DIODE GP 80V 250MA SOT23-3-11

Infineon Technologies

1,073,000 -
Datasheet BAS16 TO-236-3, SC-59, SOT-23-3 Bulk Active Standard 80 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 2pF @ 0V, 1MHz - - Surface Mount PG-SOT23-3-11 150°C
BAS16B5000 Infineon Technologies

BAS16B5000

DIODE GP 80V 250MA SOT23-3-11

Infineon Technologies

180,000 -
Datasheet BAS16 TO-236-3, SC-59, SOT-23-3 Bulk Active Standard 80 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 1 µA @ 75 V 2pF @ 0V, 1MHz - - Surface Mount PG-SOT23-3-11 150°C
BAS70-02W E6327 Infineon Technologies

BAS70-02W E6327

DIODE SCHOTTKY 70V 70MA SCD80-2

Infineon Technologies

100,337 -
Datasheet - SC-80 Bulk Active Schottky 70 V 70mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed 100 ps 100 nA @ 50 V 1.5pF @ 0V, 1MHz - - Surface Mount PG-SCD80-2 150°C
BAT54B5000 Infineon Technologies

BAT54B5000

DIODE SCHOT 30V 200MA SOT23-3-11

Infineon Technologies

90,000 -
Datasheet BAT54 TO-236-3, SC-59, SOT-23-3 Bulk Active Schottky 30 V 200mA 800 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 25 V 10pF @ 1V, 1MHz - - Surface Mount PG-SOT23-3-11 150°C
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Single Diodes FAQ

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