Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDB06S60CDIODE SIL CARB 600V 6A TO263-3-2 |
8,249 | - |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
|
FFSP05120ADIODE SIL CARBIDE 1.2KV TO220-2L |
5,844 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | - | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | - | - | - | Through Hole | TO-220-2L | - |
|
SIDC11D60SIC3DIODE SIL CARB 600V 4A WAFER |
2,474 | - |
|
Datasheet | - | Die | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 4A | 1.9 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 150pF @ 1V, 1MHz | - | - | Surface Mount | Sawn on foil | -55°C ~ 175°C |
|
SCS212AGCDIODE SIL CARB 650V 12A TO220AC |
8,837 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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IDH09G65C5XKSA2DIODE SIL CARB 650V 9A TO220-2-1 |
2,764 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.7 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 650 V | 270pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
1N3595-1DIODE GEN PURP 125V 150MA DO35 |
9,309 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
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CDLL4148E3DIODE GEN PURP 75V 200MA DO213AA |
4,255 | - |
|
Datasheet | - | DO-213AA | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 200°C |
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CDLL2810E3DIODE SCHOTTKY 50V 75MA DO213AA |
7,349 | - |
|
Datasheet | - | DO-213AA | Bulk | Active | Schottky | 50 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 nA @ 15 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
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|
CDLL6676/TRDIODE SCHOTTKY 30V 200MA DO213AA |
5,978 | - |
|
Datasheet | - | DO-213AA | Tape & Reel (TR) | Active | Schottky | 30 V | 200mA | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 30 V | 50pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
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CDLL2810/TRDIODE SCHOTTKY 20V 75MA DO213AA |
5,843 | - |
|
Datasheet | - | DO-213AA | Tape & Reel (TR) | Active | Schottky | 20 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 nA @ 15 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
VS-25FR10DIODE GEN PURP 100V 25A DO203AA |
9,281 | - |
|
Datasheet | - | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 25A | 1.3 V @ 78 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 100 V | - | - | - | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 175°C |
|
|
SD200SC100A1.T1DIODE SCHOTTKY 100V 60A DIE |
2,879 | - |
|
Datasheet | - | Die | Tray | Active | Schottky | 100 V | 60A | 870 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 1500pF @ 5V, 1MHz | - | - | Surface Mount | Die | -55°C ~ 200°C |
|
30CPF10DIODE GEN PURP 1KV 30A TO247AC |
8,552 | - |
|
Datasheet | - | TO-247-3 | Tube | Obsolete | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
|
|
DSC06065DIODE SIL CARB 650V 6A TO220AC |
8,125 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 225pF @ 100mV, 1MHz | - | - | Through Hole | TO220AC (Type WX) | -55°C ~ 175°C |
|
|
CDBJSC8650-GDIODE SIL CARB 650V 8A TO220-2 |
4,967 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NXPSC04650D6JDIODE SIL CARBIDE 650V 4A DPAK |
6,462 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
FFH60UP60SDIODE GEN PURP 600V 60A TO247-2 |
7,409 | - |
|
Datasheet | - | TO-247-2 | Tube | Obsolete | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 150°C |
|
JANTXV1N4150-1/TRDIODE GEN PURP 50V 200MA DO35 |
7,661 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/231 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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DTH6007PTDIODE 650V 60A TO247-2 |
6,078 | - |
|
Datasheet | - | TO-247-2 | Tube | Not For New Designs | - | 650 V | 60A | 2.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 100 µA @ 650 V | - | - | - | Through Hole | TO-247-2 (Type HE) | -55°C ~ 175°C |
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SICF10120Y-BPSCHOTTKY DIODES |
5,407 | - |
|
Datasheet | - | TO-220-2 Isolated Tab | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.54 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 13 µA @ 1200 V | 700pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.
