PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N648 Microchip Technology

1N648

DIODE GEN PURP 500V DO35

Microchip Technology

2,386 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 500 V - 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole DO-204AH (DO-35) -
VS-75EPU12LHN3 Vishay General Semiconductor - Diodes Division

VS-75EPU12LHN3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

4,375 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 75A 2.55 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 265 ns 420 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
1N4938 Microsemi Corporation

1N4938

ZENER DIODE

Microsemi Corporation

4,719 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 175 V 25A 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
VS-6F60 Vishay General Semiconductor - Diodes Division

VS-6F60

DIODE GEN PURP 600V 6A DO203AA

Vishay General Semiconductor - Diodes Division

8,470 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 6A 1.1 V @ 19 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
DS9-08F IXYS

DS9-08F

DIODE GEN PURP 800V 11A DO203AA

IXYS

2,193 -
Datasheet - DO-203AA, DO-4, Stud Box Obsolete Standard 800 V 11A 1.4 V @ 36 A Standard Recovery >500ns, > 200mA (Io) - 3 mA @ 800 V - - - Chassis, Stud Mount DO-203AA -40°C ~ 180°C
GP3D010A065B SemiQ

GP3D010A065B

DIODE SIL CARB 650V 10A TO247-2

SemiQ

7,555 -
Datasheet Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 419pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
IRD3901 Vishay General Semiconductor - Diodes Division

IRD3901

DIODE GEN PURP 200V 20A DO203AB

Vishay General Semiconductor - Diodes Division

5,196 -
Datasheet - DO-203AB, DO-5, Stud Bulk Obsolete Standard 200 V 20A 1.65 V @ 62.8 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 50 µA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
IRD3901R Vishay General Semiconductor - Diodes Division

IRD3901R

DIODE GEN PURP 200V 20A DO203AB

Vishay General Semiconductor - Diodes Division

9,317 -
Datasheet - DO-203AB, DO-5, Stud Bulk Obsolete Standard 200 V 20A 1.65 V @ 62.8 A Fast Recovery =< 500ns, > 200mA (Io) 350 ns 50 µA @ 200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -40°C ~ 125°C
WNSC2D2012006Q WeEn Semiconductors

WNSC2D2012006Q

WNSC2D201200/SOD59A/STANDARD MAR

WeEn Semiconductors

4,999 -
Datasheet - TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 950pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
DSEP30-04A IXYS

DSEP30-04A

DIODE GEN PURP 400V 30A TO247AD

IXYS

3,043 -
Datasheet HiPerFRED™ TO-247-2 Tube Obsolete Standard 400 V 30A 1.46 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 250 µA @ 400 V - - - Through Hole TO-247AD -55°C ~ 175°C
V15P22HM3/H Vishay General Semiconductor - Diodes Division

V15P22HM3/H

DIODE SCHOTTKY 200V 3.3A TO277A

Vishay General Semiconductor - Diodes Division

6,219 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Discontinued at Digi-Key Schottky 200 V 3.3A 910 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 200 V 835pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
20ETF12S Vishay General Semiconductor - Diodes Division

20ETF12S

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

3,966 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
UX-F5B Sanken Electric USA Inc.

UX-F5B

HIGH VOLTAGE RECTIFIER DIODE (AX

Sanken Electric USA Inc.

7,174 -
Datasheet - Axial Bulk Active Standard 8000 V 350mA 14 V @ 350 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 8000 V - - - Through Hole Axial 120°C
VS-12F40 Vishay General Semiconductor - Diodes Division

VS-12F40

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division

5,973 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-12FR40 Vishay General Semiconductor - Diodes Division

VS-12FR40

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division

6,341 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
DNA30E2200PZ-TUB IXYS

DNA30E2200PZ-TUB

DIODE GEN PURP 2.2KV 30A TO263HV

IXYS

3,788 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Surface Mount TO-263HV -55°C ~ 175°C
1N3595-1E3 Microchip Technology

1N3595-1E3

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,916 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N3595-1/TR Microchip Technology

1N3595-1/TR

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

8,217 -
Datasheet - DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard 125 V 150mA 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
1N3595A-1 Microchip Technology

1N3595A-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

5,338 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
GE08MPS06A GeneSiC Semiconductor

GE08MPS06A

DIODE SIL CARB 650V 15A TO220-2

GeneSiC Semiconductor

3 -
Datasheet SiC Schottky MPS™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 15A - No Recovery Time > 500mA (Io) - - 373pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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