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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CRS12(TE85L,Q,M) Toshiba Semiconductor and Storage

CRS12(TE85L,Q,M)

DIODE SCHOTTKY 60V 1A S-FLAT

Toshiba Semiconductor and Storage

5,059 -
Datasheet - SOD-123F Tape & Reel (TR) Active Schottky 60 V 1A 580 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V - - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CMS21(TE12L,Q,M) Toshiba Semiconductor and Storage

CMS21(TE12L,Q,M)

X35 PB-F DIODE M-FLAT MOQ=3000 V

Toshiba Semiconductor and Storage

3,000 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - -
CMS10I40A(TE12L,QM Toshiba Semiconductor and Storage

CMS10I40A(TE12L,QM

DIODE SCHOTTKY 40V 1A M-FLAT

Toshiba Semiconductor and Storage

3,000 -
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 40 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) 150°C (Max)
CMS20I40A(TE12L,QM Toshiba Semiconductor and Storage

CMS20I40A(TE12L,QM

DIODE SCHOTTKY 40V 2A M-FLAT

Toshiba Semiconductor and Storage

6,000 -
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 40 V 2A 520 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) 150°C (Max)
CMS20I30A(TE12L,QM Toshiba Semiconductor and Storage

CMS20I30A(TE12L,QM

DIODE SCHOTTKY 30V 2A M-FLAT

Toshiba Semiconductor and Storage

2,960 -
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 30 V 2A 450 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 82pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) 150°C (Max)
CMS15I40A(TE12L,QM Toshiba Semiconductor and Storage

CMS15I40A(TE12L,QM

DIODE SCHOTTKY 40V 1.5A M-FLAT

Toshiba Semiconductor and Storage

2,945 -
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 40 V 1.5A 490 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) 150°C (Max)
CMS30I40A(TE12L,QM Toshiba Semiconductor and Storage

CMS30I40A(TE12L,QM

DIODE SCHOTTKY 40V 3A M-FLAT

Toshiba Semiconductor and Storage

2,628 -
Datasheet - SOD-128 Tape & Reel (TR) Active Schottky 40 V 3A 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) 150°C (Max)
TRS3E65H,S1Q Toshiba Semiconductor and Storage

TRS3E65H,S1Q

G3 SIC-SBD 650V 3A TO-220-2L

Toshiba Semiconductor and Storage

388 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 3A 1.35 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 199pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS2E65H,S1Q Toshiba Semiconductor and Storage

TRS2E65H,S1Q

G3 SIC-SBD 650V 2A TO-220-2L

Toshiba Semiconductor and Storage

335 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.35 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 135pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS4V65H,LQ Toshiba Semiconductor and Storage

TRS4V65H,LQ

G3 SIC-SBD 650V 4A DFN8X8

Toshiba Semiconductor and Storage

4,648 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.34 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
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