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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CRG07(TE85L,Q,M) Toshiba Semiconductor and Storage

CRG07(TE85L,Q,M)

DIODE GEN PURP 400V 700MA S-FLAT

Toshiba Semiconductor and Storage

145 -
Datasheet - SOD-123F Tape & Reel (TR) Active Standard 400 V 700mA 1.1 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Surface Mount S-FLAT (1.6x3.5) 175°C (Max)
TRS10E65H,S1Q Toshiba Semiconductor and Storage

TRS10E65H,S1Q

G3 SIC-SBD 650V 10A TO-220-2L

Toshiba Semiconductor and Storage

68 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 649pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS10H120H,S1Q Toshiba Semiconductor and Storage

TRS10H120H,S1Q

1200V 3RDGEN SIC-SBD 10A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 1148pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
TRS15H120H,S1Q Toshiba Semiconductor and Storage

TRS15H120H,S1Q

1200V 3RDGEN SIC-SBD 15A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.45 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1673pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
TRS20H120H,S1Q Toshiba Semiconductor and Storage

TRS20H120H,S1Q

1200V 3RDGEN SIC-SBD 20A TO-247-

Toshiba Semiconductor and Storage

60 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 61A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 130 µA @ 1200 V 2070pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
CUS520,H3F Toshiba Semiconductor and Storage

CUS520,H3F

DIODE SCHOTTKY 30V 200MA USC

Toshiba Semiconductor and Storage

3,086 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Schottky 30 V 200mA 280 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 30 V 17pF @ 0V, 1MHz - - Surface Mount USC 125°C (Max)
BAS316,H3F Toshiba Semiconductor and Storage

BAS316,H3F

DIODE GEN PURP 100V 250MA USC

Toshiba Semiconductor and Storage

4 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Standard 100 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 3 ns 200 nA @ 80 V 0.35pF @ 0V, 1MHz - - Surface Mount USC 150°C (Max)
CUS357,H3F Toshiba Semiconductor and Storage

CUS357,H3F

DIODE SCHOTTKY 40V 100MA USC

Toshiba Semiconductor and Storage

6,848 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Active Schottky 40 V 100mA 600 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 11pF @ 0V, 1MHz - - Surface Mount USC 125°C (Max)
JDH2S02SL,L3F Toshiba Semiconductor and Storage

JDH2S02SL,L3F

DIODE SCHOTTKY 10V 10MA SL2

Toshiba Semiconductor and Storage

2,449 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 10 V 10mA - Small Signal =< 200mA (Io), Any Speed - 25 µA @ 500 mV 0.25pF @ 200mV, 1MHz - - Surface Mount SL2 125°C (Max)
TRS2E65F,S1Q Toshiba Semiconductor and Storage

TRS2E65F,S1Q

DIODE SIL CARB 650V 2A TO220-2L

Toshiba Semiconductor and Storage

23 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.6 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 8.7pF @ 650V, 1MHz - - Through Hole TO-220-2L 175°C (Max)
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