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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
TRS4E65H,S1Q Toshiba Semiconductor and Storage

TRS4E65H,S1Q

G3 SIC-SBD 650V 4A TO-220-2L

Toshiba Semiconductor and Storage

341 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS6V65H,LQ Toshiba Semiconductor and Storage

TRS6V65H,LQ

G3 SIC-SBD 650V 6A DFN8X8

Toshiba Semiconductor and Storage

4,803 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS6E65H,S1Q Toshiba Semiconductor and Storage

TRS6E65H,S1Q

G3 SIC-SBD 650V 6A TO-220-2L

Toshiba Semiconductor and Storage

194 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS8E65H,S1Q Toshiba Semiconductor and Storage

TRS8E65H,S1Q

G3 SIC-SBD 650V 8A TO-220-2L

Toshiba Semiconductor and Storage

338 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.35 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 520pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
TRS10V65H,LQ Toshiba Semiconductor and Storage

TRS10V65H,LQ

G3 SIC-SBD 650V 10A DFN8X8

Toshiba Semiconductor and Storage

3,975 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 649pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12V65H,LQ Toshiba Semiconductor and Storage

TRS12V65H,LQ

G3 SIC-SBD 650V 12A DFN8X8

Toshiba Semiconductor and Storage

4,472 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
TRS12E65H,S1Q Toshiba Semiconductor and Storage

TRS12E65H,S1Q

G3 SIC-SBD 650V 12A TO-220-2L

Toshiba Semiconductor and Storage

370 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 778pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
CBS10S40,L3F Toshiba Semiconductor and Storage

CBS10S40,L3F

DIODE SCHOTTKY 40V 1A CST2B

Toshiba Semiconductor and Storage

8,993 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 40 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 40 V 120pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CBS10S30,L3F Toshiba Semiconductor and Storage

CBS10S30,L3F

DIODE SCHOTTKY 20V 1A CST2B

Toshiba Semiconductor and Storage

6,608 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Obsolete Schottky 20 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 135pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
CCS15S30,L3F Toshiba Semiconductor and Storage

CCS15S30,L3F

DIODE SCHOTTKY 20V 1.5A CST2C

Toshiba Semiconductor and Storage

29,761 -
Datasheet - 2-SMD, No Lead Tape & Reel (TR) Active Schottky 20 V 1.5A 400 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 200pF @ 0V, 1MHz - - Surface Mount CST2C 125°C (Max)
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Single Diodes FAQ

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