PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UPS840/TR13 Microchip Technology

UPS840/TR13

DIODE SCHOTTKY 40V 8A POWERMITE3

Microchip Technology

1,835 -
Datasheet - Powermite®3 Tape & Reel (TR) Active Schottky 40 V 8A 450 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - - - Surface Mount Powermite 3 -55°C ~ 125°C
S4D04120A SMC Diode Solutions

S4D04120A

DIODE SIL CARB 1.2KV 4A TO220AC

SMC Diode Solutions

547 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 4A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
FFSD0665B-F085 onsemi

FFSD0665B-F085

DIODE SIL CARB 650V 9.1A DPAK

onsemi

1,948 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-8EWS08STRL-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS08STRL-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

5,527 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 8A 1.1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 800 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
UCQ30A03-TE24L2 KYOCERA AVX

UCQ30A03-TE24L2

DIODE SCHOTTKY 30V 30A TO263LP

KYOCERA AVX

10,325 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 30 V 30A 500 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V - - - Surface Mount TO-263LP -40°C ~ 150°C
VS-E5PW3006LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PW3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

1,850 -
Datasheet FRED Pt® Gen 5 TO-247-2 Tube Active Standard 600 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 39 ns 20 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E4PH6006L-N3 Vishay General Semiconductor - Diodes Division

VS-E4PH6006L-N3

DIODE GP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

395 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 68 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 175°C
IDK02G120C5XTMA1 Infineon Technologies

IDK02G120C5XTMA1

DIODE SIC 1.2KV 11.8A TO263-1

Infineon Technologies

688 -
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 11.8A 1.65 V @ 2 A No Recovery Time > 500mA (Io) - 18 µA @ 1200 V 182pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
VS-8EWS08STR-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS08STR-M3

DIODE GEN PURP 800V 8A D-PAK

Vishay General Semiconductor - Diodes Division

1,532 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 800 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
STBR3008G2Y-TR STMicroelectronics

STBR3008G2Y-TR

DIODE GEN PURP 800V 30A D2PAK HV

STMicroelectronics

422 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 30A 1.1 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 800 V - Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
IDW40E65D1FKSA1 Infineon Technologies

IDW40E65D1FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

110 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 1.7 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 129 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
VS-EPU6006L-N3 Vishay General Semiconductor - Diodes Division

VS-EPU6006L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

217 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 110 ns 30 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
STBR3012W STMicroelectronics

STBR3012W

DIODE GEN PURP 1.2KV 30A DO247

STMicroelectronics

1,666 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 30A 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 2 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
SDUR6030W SMC Diode Solutions

SDUR6030W

DIODE GEN PURP 300V 60A TO247AC

SMC Diode Solutions

4,362 -
Datasheet - TO-247-2 Tube Active Standard 300 V 60A 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 300 V - - - Through Hole TO-247AC -55°C ~ 150°C
JANTX1N3595-1 Microchip Technology

JANTX1N3595-1

DIODE GEN PURP 125V 150MA DO35

Microchip Technology

174 -
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
IDH06G65C5XKSA2 Infineon Technologies

IDH06G65C5XKSA2

DIODE SIL CARB 650V 6A TO220-2-1

Infineon Technologies

1,287 -
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
1N4245 Microchip Technology

1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

264 -
Datasheet - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-E5TX3006S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TX3006S2LHM3

30A, 600V, "X" SERIES GEN 5 FRED

Vishay General Semiconductor - Diodes Division

1,566 -
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-45EPS12L-M3 Vishay General Semiconductor - Diodes Division

VS-45EPS12L-M3

DIODE GEN PURP 1.2KV 45A TO247AD

Vishay General Semiconductor - Diodes Division

187 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 45A 1.14 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-APU6006-N3 Vishay General Semiconductor - Diodes Division

VS-APU6006-N3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

486 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Through Hole TO-247AC -40°C ~ 150°C
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Single Diodes FAQ

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