Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RURG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	194	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STPSC10065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,016	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10H065G-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	516	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,206	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
DMA30E1800HA DIODE GEN PURP 1.8KV 30A TO247 IXYS	300	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1800 V	30A	1.25 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	10pF @ 400V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC010SDA120K DIODE SIL CARB 1.2KV 10A TO220 Microchip Technology	178	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-220-2	-
DSI45-12A DIODE GEN PURP 1.2KV 45A TO247AD IXYS	635	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	45A	1.28 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 1200 V	18pF @ 400V, 1MHz	-	-	Through Hole	TO-247AD	-40°C ~ 175°C
C6D08065E DIODE SIL CARB 650V 29A TO252-2 Wolfspeed, Inc.	767	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C6D08065G DIODE SIL CARB 650V 30A TO263-2 Wolfspeed, Inc.	653	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
IDH08G120C5XKSA1 DIODE SIL CARB 1.2KV TO220-1 Infineon Technologies	285	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	22.8A	1.95 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
SIC0860P-BP DIODE SIL CARB 650V 8A TO220AC Micro Commercial Co	4,804	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	30pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC10H065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,278	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
CD5819 DIODE SCHOTTKY 40V 1A DIE Microchip Technology	392	-	RFQ	Datasheet	-	Die	Bulk	Active	Schottky	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Military	MIL-PRF-19500/586	Surface Mount	Die	-55°C ~ 125°C
VS-60APH03-N3 DIODE GEN PURP 300V 60A TO247AC Vishay General Semiconductor - Diodes Division	220	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	300 V	60A	1.45 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	42 ns	10 µA @ 300 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
VS-75EPU12L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	813	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	75A	2.55 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	265 ns	420 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
DNA30EM2200PZ-TUB DIODE GEN PURP 2.2KV 30A TO263HV IXYS	441	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263HV	-55°C ~ 175°C
STTH60RQ06W DIODE GEN PURP 600V 60A DO247 STMicroelectronics	313	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	60A	-	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	80 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
SCS206AJTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,842	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS306AJTLL DIODE SIL CARBIDE 650V 6A LPTL Rohm Semiconductor	2,023	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
GD10MPS12H DIODE SIL CARB 1.2KV 10A TO247-2 GeneSiC Semiconductor	540	-	RFQ	Datasheet	SiC Schottky MPS™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247-2	175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.