PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
STPSC6H065DLF STMicroelectronics

STPSC6H065DLF

DIODE SIL CARB 650V 6A POWERFLAT

STMicroelectronics

10,686 -
Datasheet ECOPACK®2 8-PowerVDFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 350pF @ 0V, 1MHz - - Surface Mount PowerFlat™ (8x8) HV -40°C ~ 175°C
VS-60EPU06L-N3 Vishay General Semiconductor - Diodes Division

VS-60EPU06L-N3

DIODE GEN PURP 600V 60A TO247AD

Vishay General Semiconductor - Diodes Division

168 -
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 60A 1.68 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 81 ns 50 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
STTH1512W STMicroelectronics

STTH1512W

DIODE GEN PURP 1.2KV 15A DO247

STMicroelectronics

380 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 15A 2.1 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 15 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
VS-20ETF06SLHM3 Vishay General Semiconductor - Diodes Division

VS-20ETF06SLHM3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

5,516 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 20A 1.67 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division

VS-E5TH3012S2L-M3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,046 -
Datasheet FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STTH30R06PI STMicroelectronics

STTH30R06PI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

2,646 -
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole DOP3I 175°C (Max)
VS-8EWS16STR-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS16STR-M3

DIODE GEN PURP 1.6KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

3,778 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
VS-E5TH3012S2LHM3 Vishay General Semiconductor - Diodes Division

VS-E5TH3012S2LHM3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

176 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C04ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

1,518 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 175pF @ 1V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
DHG10I1200PM IXYS

DHG10I1200PM

DIODE GP 1.2KV 10A TO220ACFP

IXYS

190 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 1200 V 10A 2.69 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 15 µA @ 1200 V - - - Through Hole TO-220ACFP -55°C ~ 150°C
STTH3012WL STMicroelectronics

STTH3012WL

DIODE GP 1.2KV 30A DO247 LL

STMicroelectronics

569 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 2.25 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 20 µA @ 1200 V - - - Through Hole DO-247 LL 175°C
MSC010SDA070B Microchip Technology

MSC010SDA070B

DIODE SIL CARBIDE 700V 24A TO247

Microchip Technology

122 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 700 V 24A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 353pF @ 1V, 1MHz - - Through Hole TO-247 -55°C ~ 175°C
C3D06060G-TR Wolfspeed, Inc.

C3D06060G-TR

DIODE SIL CARB 600V 19A TO263-2

Wolfspeed, Inc.

4,800 -
Datasheet Z-Rec® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 19A 1.7 V @ 6 A No Recovery Time > 500mA (Io) - 50 µA @ 600 V 295pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
DSI30-08AS-TRL IXYS

DSI30-08AS-TRL

DIODE GEN PURP 800V 30A TO263AA

IXYS

2,782 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
IDW40E65D2FKSA1 Infineon Technologies

IDW40E65D2FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

2,289 -
Datasheet - TO-247-3 Tube Active Standard 650 V 80A 2.3 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 40 µA @ 650 V - - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
S4D05120E SMC Diode Solutions

S4D05120E

DIODE SIL CARBIDE 1.2KV 5A DPAK

SMC Diode Solutions

2,432 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
STPSC8H065B-TR STMicroelectronics

STPSC8H065B-TR

DIODE SIL CARBIDE 650V 8A DPAK

STMicroelectronics

13,754 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
VS-20ETF12THM3 Vishay General Semiconductor - Diodes Division

VS-20ETF12THM3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

848 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
C6D06065G-TR Wolfspeed, Inc.

C6D06065G-TR

DIODE SIL CARB 650V 23A TO263-2

Wolfspeed, Inc.

2,423 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 23A 1.4 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 393pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
C6D06065Q-TR Wolfspeed, Inc.

C6D06065Q-TR

DIODE SIL CARBIDE 650V 21A 4QFN

Wolfspeed, Inc.

2,173 -
Datasheet - 4-PowerVQFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 21A 1.5 V @ 6 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 393pF @ 0V, 1MHz - - Surface Mount 4-QFN (8x8) -55°C ~ 175°C
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Single Diodes FAQ

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