PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S3D50065D1 SMC Diode Solutions

S3D50065D1

DIODE SIL CARB 650V 112A TO247AD

SMC Diode Solutions

244 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 112A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 3100pF @ 0V, 100MHz - - Through Hole TO-247AD -55°C ~ 175°C
STPSC20065DY STMicroelectronics

STPSC20065DY

DIODE SIL CARB 650V 20A TO220AC

STMicroelectronics

498 -
Datasheet ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.45 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 1250pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
VS-HFA16PB120-N3 Vishay General Semiconductor - Diodes Division

VS-HFA16PB120-N3

DIODE GP 1.2KV 16A TO247AC

Vishay General Semiconductor - Diodes Division

891 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 16A 3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 20 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AC Modified -55°C ~ 150°C
DNA30E2200FE IXYS

DNA30E2200FE

DIODE GEN PURP 2.2KV 30A I4-PAC

IXYS

109 -
Datasheet - TO-251-2, IPAK Tube Active Standard 2200 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole i4-PAC -55°C ~ 175°C
FFSH3065B-F085 onsemi

FFSH3065B-F085

DIODE SIL CARB 650V 37A TO247-2

onsemi

466 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 37A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 1260pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
C6D20065A Wolfspeed, Inc.

C6D20065A

DIODE SIL CARB 650V 66A TO220-2

Wolfspeed, Inc.

351 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 66A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 1153pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-40HFR120 Vishay General Semiconductor - Diodes Division

VS-40HFR120

DIODE GEN PURP 1.2KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

106 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
STPSC15H12G2Y-TR STMicroelectronics

STPSC15H12G2Y-TR

DIODE SIL CARB 1.2KV 15A D2PAK

STMicroelectronics

931 -
Datasheet ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 1200 V 1200pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount D2PAK HV -40°C ~ 175°C
UJ3D1220KSD Qorvo

UJ3D1220KSD

DIODE SIL CARB 1.2KV 10A TO247-3

Qorvo

1,188 -
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
1N3891 GeneSiC Semiconductor

1N3891

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor

887 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 25 µA @ 50 V - - - Chassis, Stud Mount DO-4 -65°C ~ 150°C
VS-60EPF12-M3 Vishay General Semiconductor - Diodes Division

VS-60EPF12-M3

DIODE GP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

494 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 1.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
1N3595US Microchip Technology

1N3595US

DIODE GEN PURP 4A B SQ-MELF

Microchip Technology

158 -
Datasheet - SQ-MELF, B Bulk Active Standard - 4A 1 V @ 200 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 1 nA @ 125 V - - - Surface Mount B, SQ-MELF -65°C ~ 150°C
DSEP15-12CR IXYS

DSEP15-12CR

DIODE GP 1.2KV 15A ISOPLUS247

IXYS

265 -
Datasheet HiPerDynFRED™ TO-247-3 Tube Active Standard 1200 V 15A 4.04 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 20 ns 100 µA @ 1200 V - - - Through Hole ISOPLUS247™ -55°C ~ 175°C
1N1184 GeneSiC Semiconductor

1N1184

DIODE GEN PURP 100V 35A DO5

GeneSiC Semiconductor

191 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 35A 1.2 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 190°C
CDLL5711 Microchip Technology

CDLL5711

DIODE SCHOTTKY 50V 33MA DO213AA

Microchip Technology

265 -
Datasheet - DO-213AA Bulk Active Schottky 50 V 33mA 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 150°C
1N1184A GeneSiC Semiconductor

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor

260 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.1 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - - - Chassis, Stud Mount DO-5 -65°C ~ 200°C
SCS320AJTLL Rohm Semiconductor

SCS320AJTLL

DIODE SIL CARBIDE 650V 20A LPTL

Rohm Semiconductor

612 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 1000pF @ 1V, 1MHz - - Surface Mount LPTL 175°C (Max)
1N5416US Microchip Technology

1N5416US

DIODE GEN PURP 100V 3A D-5B

Microchip Technology

111 -
Datasheet - SQ-MELF, E Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - - - Surface Mount D-5B -65°C ~ 175°C
MSC030SDA120B Microchip Technology

MSC030SDA120B

DIODE SIL CARB 1.2KV 30A TO247

Microchip Technology

1,046 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
DSEP60-12A IXYS

DSEP60-12A

DIODE GEN PURP 1.2KV 60A TO247AD

IXYS

258 -
Datasheet HiPerFRED™ TO-247-2 Tube Active Standard 1200 V 60A 2.66 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 650 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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