Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-35EPF12LHM3 DIODE GEN PURP 1.2KV 35A TO247AD Vishay General Semiconductor - Diodes Division	169	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	35A	1.47 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
MSC010SDA120B DIODE SIL CARB 1.2KV 10A TO247 Microchip Technology	1,511	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	-	-	Through Hole	TO-247	-
JAN1N5552 DIODE GEN PURP 600V 3A AXIAL Microchip Technology	152	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
SCS210AGC17 DIODE SIC 650V 10A TO220ACFP Rohm Semiconductor	1,918	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STTH3006PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	444	-	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DOP3I	175°C (Max)
VS-E5PH6012LHN3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	334	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PH6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	113	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S4D08120E DIODE SIL CARBIDE 1.2KV 8A DPAK SMC Diode Solutions	2,606	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	560pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
SCS206AGC17 DIODE SIL CARB 650V 6A TO220ACFP Rohm Semiconductor	638	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
VS-E5PX6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	165	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	60A	3.15 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	301	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-40EPS08-M3 DIODE GP 800V 40A TO247AC Vishay General Semiconductor - Diodes Division	678	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	40A	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65PQ015-N3 DIODE SCHOTTKY 15V 65A TO247AC Vishay General Semiconductor - Diodes Division	103	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Schottky	15 V	65A	500 mV @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 15 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 125°C
VS-E5PH7512L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	3,490	-	RFQ	Datasheet	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	1200 V	75A	2.6 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	145 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
RRD20TJ10SGC9 DIODE GEN PURP 1KV 20A TO220ACFP Rohm Semiconductor	219	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	20A	1.05 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	-	-	Through Hole	TO-220ACFP	150°C
C3D06065E DIODE SIL CARB 650V 20A TO252-2 Wolfspeed, Inc.	1,387	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	295pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
IDH08SG60CXKSA2 DIODE SIL CARB 600V 8A TO220-2-1 Infineon Technologies	1,662	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	8A	2.1 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
VS-30EPF12-M3 DIODE GP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division	443	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	1.41 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-30EPF06-M3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	500	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	1.41 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
C6D10065G-TR DIODE SIL CARB 650V 36A TO263-2 Wolfspeed, Inc.	1,525	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.4 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	611pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.