Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C6D10065GDIODE SIL CARB 650V 36A TO263-2 |
253 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.4 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
FFSP2065B-F085DIODE SIL CARB 650V 20A TO220-2 |
660 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DSA1-18DDIODE AVALANCHE 1.8KV 2.3A |
262 | - |
|
Datasheet | - | Radial | Bulk | Active | Avalanche | 1800 V | 2.3A | 1.34 V @ 7 A | Standard Recovery >500ns, > 200mA (Io) | - | 700 µA @ 1800 V | - | - | - | Through Hole | - | -40°C ~ 150°C |
|
FFSD2065BDIODE SIL CARB 650V 23.4A DPAK |
1,771 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 23.4A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
IDK10G120C5XTMA1DIODE SIC 1.2KV 31.9A TO263-1 |
835 | - |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.9A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
DSEI30-12ADIODE GEN PURP 1.2KV 26A TO247AD |
205 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 26A | 2.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 750 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDW12G65C5XKSA1DIODE SIL CARB 650V 12A TO247-3 |
268 | - |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
IDH12G65C5XKSA2DIODE SIL CARB 650V 12A TO220-1 |
850 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
STPSC15H12DDIODE SIL CARB 1.2KV 15A TO220AC |
2,768 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
1N5806E3DIODE GEN PURP 150V 1A A AXIAL |
123 | - |
|
Datasheet | - | Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
APT60D100BGDIODE GEN PURP 1KV 60A TO247 |
839 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
STBR6012WDIODE GEN PURP 1.2KV 60A DO247 |
516 | - |
|
Datasheet | - | DO-247-2 (Straight Leads) | Tube | Active | Standard | 1200 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
|
|
DHG30I1200HADIODE GEN PURP 1.2KV 30A TO247 |
300 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 2.26 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 50 µA @ 1200 V | - | - | - | Through Hole | TO-247 | -55°C ~ 150°C |
|
C3D10065IDIODE SIL CARB 650V 19A TO220-2 |
1,325 | - |
|
Datasheet | Z-Rec® | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 19A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 Isolated Tab | -55°C ~ 175°C |
|
|
STTH6012WLDIODE GP 1.2KV 60A DO247 LL |
946 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.25 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 30 µA @ 1200 V | - | - | - | Through Hole | DO-247 LL | 175°C |
|
|
STBR6012WYDIODE GEN PURP 1.2KV 60A DO247 |
112 | - |
|
Datasheet | ECOPACK®2 | DO-247-2 (Straight Leads) | Tube | Active | Standard | 1200 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
|
|
STBR6008WYDIODE GEN PURP 800V 60A DO247 |
510 | - |
|
Datasheet | - | DO-247-2 (Straight Leads) | Tube | Active | Standard | 800 V | 60A | 1.1 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
|
|
GD30MPS06HDIODE SIL CARB 650V 49A TO247-2 |
614 | - |
|
Datasheet | SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 49A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
VS-HFA25PB60-N3DIODE GP 600V 25A TO247AC |
385 | - |
|
Datasheet | HEXFRED® | TO-247-2 | Tube | Active | Standard | 600 V | 25A | 1.7 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
|
IDD10SG60CXTMA2DIODE SIL CARB 600V 10A TO252-3 |
217 | - |
|
Datasheet | CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.
