Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SCS315AJTLL DIODE SIL CARBIDE 650V 15A LPTL Rohm Semiconductor	400	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	750pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
UJ3D1220K2 DIODE SIL CARB 1.2KV 20A TO247-2 Qorvo	327	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 1200 V	810pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSP3065A DIODE SIL CARB 650V 30A TO220-2L onsemi	1,291	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	1705pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
STTH1506DPI DIODE GEN PURP 600V 15A DOP3I STMicroelectronics	600	-	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	15A	3.6 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	20 µA @ 600 V	-	-	-	Through Hole	DOP3I	150°C (Max)
FFSP20120A DIODE SIL CARB 1.2KV 20A TO220L onsemi	734	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-1N1184RA DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	170	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
DUR60120W DIODE GEN PURP 1.2KV 60A TO247AC Littelfuse Inc.	20,857	-	RFQ	Datasheet	DUR	TO-247-2	Tube	Active	Standard	1200 V	60A	3.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	650 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
FFSH2065B-F085 DIODE SIL CARB 650V 20A TO247-2 onsemi	157	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
SCS210AJHRTLL DIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor	894	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
RFL60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	601	-	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	1.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
SCS215KGC17 DIODE SIC 1.2KV 15A TO220ACFP Rohm Semiconductor	1,996	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	790pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
STPSC15H12G2-TR DIODE SIL CARB 1.2KV 15A D2PAK STMicroelectronics	1,943	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
VS-3C16ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,594	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
SCS215AEGC11 DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor	293	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C
RFS60TZ6SGC13 DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor	566	-	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	650 V	60A	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 650 V	-	-	-	Through Hole	TO-247GE	175°C
FFSH1065B-F085 DIODE SIL CARB 650V 11.5A TO247 onsemi	1,685	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
S3D30065D1 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	255	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
IDW20G65C5BXKSA2 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	122	-	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
121SPC045A DIODE SCHOTTKY 45V 120A SPD-3A SMC Diode Solutions	340	-	RFQ	Datasheet	-	SPD-3A	Bulk	Active	Schottky	45 V	120A	660 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4 mA @ 45 V	4800pF @ 5V, 1MHz	-	-	Surface Mount	SPD-3A	-55°C ~ 175°C
S3D30065H DIODE SIL CARB 650V 84A TO247AC SMC Diode Solutions	249	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.