Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S4D10120A DIODE SIL CARB 1.2KV 10A TO220AC SMC Diode Solutions	260	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
VS-3C10ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	2,345	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	445pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
FFSP08120A DIODE SIL CARB 1.2KV 8A TO220-2L onsemi	365	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.75 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	538pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
GP3D030A065B DIODE SIL CARB 650V 30A TO247-2 SemiQ	142	-	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.65 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	1247pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
UJ3D06530TS DIODE SIL CARB 650V 30A TO220-2 Qorvo	7,715	-	RFQ	Datasheet	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	370 µA @ 650 V	990pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STTH30RQ06L2-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	600	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	-	-	Surface Mount	HU3PAK	175°C
SCS220AGC17 DIODE SIC 650V 20A TO220ACFP Rohm Semiconductor	706	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
DSEI36-06AS-TRL DIODE GEN PURP 600V 37A TO263AA IXYS	2,069	-	RFQ	Datasheet	FRED	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
1N3595UR-1 DIODE GP 125V 150MA DO213AA Microchip Technology	624	-	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	125 V	150mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
IDH10SG60CXKSA2 DIODE SIL CARB 600V 10A TO220-1 Infineon Technologies	330	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	10A	2.1 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 600 V	290pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
SIC1060PL8-TP DIODE SIL CARB 650V 10A DFN8080A Micro Commercial Co	6,000	-	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	452pF @ 0V, 1MHz	-	-	Surface Mount	DFN8080A	-55°C ~ 175°C
AIDK08S65C5ATMA1 DISCRETE DIODES Infineon Technologies	188	-	RFQ	Datasheet	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	248pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
SCS206AJHRTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,756	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
S3D20065A DIODE SIL CARB 650V 20A TO220AC SMC Diode Solutions	289	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	1200pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
SCS310AJTLL DIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor	518	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
APT15DQ120BHBG DIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology	101	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	15A	3.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
VS-40EPF06-M3 DIODE GP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division	478	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	40A	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
STTH6010WY DIODE GEN PURP 1KV 60A DO247 STMicroelectronics	548	-	RFQ	Datasheet	Q	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1000 V	-	Automotive	-	Through Hole	DO-247	-40°C ~ 175°C
C3D08065A DIODE SIL CARB 650V 24A TO220-2 Wolfspeed, Inc.	718	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	441pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSP2065BDN-F085 DIODE SIL CARB 650V 10A TO220-3 onsemi	180	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.