Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
C3D12065A DIODE SIL CARB 650V 35A TO220-2 Wolfspeed, Inc.	1,747	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	74 µA @ 650 V	641.5pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
IDW10G65C5XKSA1 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	232	-	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
IDD08SG60CXTMA2 DIODE SIL CARB 600V 8A TO252-3 Infineon Technologies	178	-	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	8A	2.1 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
VS-3C08ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	2,373	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	45 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
FFSB0865B-F085 DIODE SIL CARB 650V 10.1A D2PAK onsemi	550	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10.1A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
VS-90APS16L-M3 DIODE GEN PURP 1.6KV 90A TO247AD Vishay General Semiconductor - Diodes Division	492	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1600 V	90A	1.21 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
FFSP1665A DIODE SIL CARB 650V 16A TO220-2 onsemi	1,882	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.75 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC12065G2Y-TR DIODE SIL CARB 650V 12A D2PAK HV STMicroelectronics	859	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
C3D10065A DIODE SIL CARB 650V 30A TO220-2 Wolfspeed, Inc.	938	-	RFQ	Datasheet	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSM1065A DIODE SIL CARBIDE 650V 11A 4PQFN onsemi	2,995	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC12H065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	966	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
FFSH1265BDN-F085 DIODE SIL CARB 650V 7.2A TO247-3 onsemi	756	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	7.2A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
SCS308AJTLL DIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor	915	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	-	-	Surface Mount	LPTL	175°C (Max)
SIC0860PL8-TP DIODE SIL CARB 650V 8A DFN8080A Micro Commercial Co	6,000	-	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	346pF @ 0V, 1MHz	-	-	Surface Mount	DFN8080A	-55°C ~ 175°C
VS-3C16ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	3,020	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-EPH3006-N3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	422	-	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	30A	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-65°C ~ 175°C
VS-APU3006-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	440	-	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-247AC	-65°C ~ 175°C
SICB1060P-TP DIODE SIL CARBIDE 650V 10A D2PAK Micro Commercial Co	780	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	36pF @ 400V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
S3D30065A DIODE SIL CARB 650V 84A TO220AC SMC Diode Solutions	996	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	84A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
VS-E5PX7512L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	500	-	RFQ	Datasheet	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	1200 V	75A	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	50 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.