Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4938DIODE GEN PURP 200V 500MA DO35 |
57,593 | - |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Obsolete | Standard | 200 V | 500mA | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 75 V | 5pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | 175°C (Max) |
|
STPSC6H065BY-TRDIODE SIL CARBIDE 650V 6A DPAK |
7,471 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | - | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DPAK | -40°C ~ 175°C |
|
IDK10G65C5XTMA1DIODE SIL CARB 650V 10A TO263-2 |
5,530 | - |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 1.7 mA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
WNSC2D08650DJDIODE SIL CARBIDE 650V 8A DPAK |
7,463 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
|
BYQ60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
569 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
BYV60W-600PT2QDIODE GEN PURP 600V 60A TO247-2 |
468 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 79 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C |
|
SCS304APC9DIODE SILICON CARBIDE 650V 4A |
862 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
RFUS20NS4STLDIODE GEN PURP 430V 20A LPDS |
259 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 430 V | 20A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | Surface Mount | LPDS | 150°C (Max) |
|
RBQ30NS45BTLDIODE SCHOTTKY 45V 30A LPDS |
706 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 30A | 590 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 45 V | - | - | - | Surface Mount | LPDS | 150°C |
|
WNSC2D10650QDIODE SIL CARB 650V 10A TO220AC |
995 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
MUR3040DIODE GEN PURP 400V 15A TO218 |
7,505 | - |
|
Datasheet | - | TO-218-2 | Bulk | Active | Standard | 400 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 35 µA @ 400 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-218 | -65°C ~ 175°C |
|
SDT05S60DIODE SIL CARB 600V 5A TO220-2 |
2,481 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 170pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
RHRU5060DIODE AVALANCHE 600V 50A TO218 |
734 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 µA @ 600 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
WNSC6D166506QDIODE SIL CARB 650V 16A TO220AC |
2,976 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
RURG8080DIODE AVALANCHE 800V 80A TO247-2 |
703 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 800 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 800 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
RURG8070DIODE AVALANCHE 700V 80A TO247-2 |
450 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 700 V | 80A | 1.9 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 700 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
BYC30W-600PT2QDIODE GEN PURP 600V 30A TO247-2 |
1,787 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | Standard | 600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 34 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
PSDH60120L1_T0_00001TO-247AD-2LD, FAST |
1,500 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 330 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
S3D08065LDIODE SIL CARBIDE 650V 24A 5DFN |
1,200 | - |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 650pF @ 0V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
|
BYC30W-1200PQDIODE GEN PURP 1.2KV 30A TO247-2 |
386 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.