Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PSDB3060L1_T0_00001 TO-263, FRED Panjit International Inc.	1,658	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-	-	-	Surface Mount	TO-263	-55°C ~ 150°C
WNSC2D10650BJ DIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors	8,768	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
PSDH30120L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,460	-	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	1200 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
PSDH30120S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,388	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
S4D10120G0 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
S4D10120G 1200V, 10A, D2PAK, SIC SCHOTTKY SMC Diode Solutions	133	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-2	-
WNSC2D12650TJ DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,985	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
SCS310AHGC9 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	361	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
RURU5060 DIODE AVALANCHE 600V 50A TO218 Harris Corporation	3,504	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	600 V	50A	1.6 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	500 µA @ 600 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RURG8050 DIODE AVALANCHE 500V 80A TO247-2 Harris Corporation	481	-	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	500 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 500 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RURU8040 DIODE AVALANCHE 400V 80A TO218 Harris Corporation	3,000	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	400 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 400 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
WNSC12650T6J DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,998	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
IDT10S60C DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	1,479	-	RFQ	Datasheet	thinQ!™	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
SICU0460B-TP DIODE SIL CARBIDE 650V 4A DPAK Micro Commercial Co	2,413	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	-	15 µA @ 650 V	200pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
FFSH1665A DIODE SIL CARB 650V 23A TO247-2 onsemi	8,896	-	RFQ	Datasheet	-	TO-247-2	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 150°C
FFSP0465A DIODE SIL CARB 650V 8.6A TO220-2 onsemi	792	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
NXPSC066506Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	3,000	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PCDD0665G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,976	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
NXPSC06650B6J DIODE SIL CARBIDE 650V 6A D2PAK WeEn Semiconductors	3,188	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
PCDB0665G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	800	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.