PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
APT30D60SG Microchip Technology

APT30D60SG

DIODE GEN PURP 600V 30A D3

Microchip Technology

168 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 250 µA @ 600 V - - - Surface Mount D3PAK -55°C ~ 175°C
V30K170HM3/H Vishay General Semiconductor - Diodes Division

V30K170HM3/H

DIODE SCHOTTKY 170V 3.4A FLATPAK

Vishay General Semiconductor - Diodes Division

1,500 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key Schottky 170 V 3.4A 1.04 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 170 V 1250pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount FlatPAK (5x6) -40°C ~ 165°C
V35PW22HM3/I Vishay General Semiconductor - Diodes Division

V35PW22HM3/I

DIODE SCHOTTKY 200V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3,030 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key Schottky 200 V 35A 990 mV @ 35 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 200 V 1320pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount SlimDPAK -40°C ~ 175°C
RURU50120 Harris Corporation

RURU50120

DIODE AVALANCHE 1.2KV 50A TO218

Harris Corporation

4,510 -
Datasheet - TO-218-1 Bulk Active Avalanche 1200 V 50A 2.1 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 1200 V - - - Chassis Mount TO-218 -65°C ~ 175°C
BYC60W-600PQ WeEn Semiconductors

BYC60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

2,426 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2.6 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
TRS8V65H,LQ Toshiba Semiconductor and Storage

TRS8V65H,LQ

G3 SIC-SBD 650V 8A DFN8X8

Toshiba Semiconductor and Storage

2,000 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.35 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 90 µA @ 650 V 520pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
RHRU50120 Harris Corporation

RHRU50120

DIODE AVALANCHE 1.2KV 50A TO218

Harris Corporation

425 -
Datasheet - TO-218-1 Bulk Active Avalanche 1200 V 50A 3.2 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 500 µA @ 1200 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RHRU501200 Harris Corporation

RHRU501200

RECTIFIER DIODE, AVALANCHE

Harris Corporation

120 -
Datasheet * - Bulk Active - - - - - - - - - - - - -
WNSC2D10650DJ WeEn Semiconductors

WNSC2D10650DJ

DIODE SIL CARBIDE 650V 10A DPAK

WeEn Semiconductors

7,097 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
S3D10065L SMC Diode Solutions

S3D10065L

DIODE SIL CARBIDE 650V 31A 5DFN

SMC Diode Solutions

497 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 31A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 787pF @ 0V, 1MHz - - Surface Mount 5-DFN (8x8) -55°C ~ 175°C
S3D12065G SMC Diode Solutions

S3D12065G

DIODE SIL CARBIDE 650V 35A D2PAK

SMC Diode Solutions

641 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 35A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 16 µA @ 650 V 764pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
RHRG3040 Harris Corporation

RHRG3040

DIODE AVALANCHE 400V 30A TO247-2

Harris Corporation

4,298 -
Datasheet - TO-247-2 Bulk Active Avalanche 400 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 250 µA @ 400 V - - - Through Hole TO-247-2 -65°C ~ 175°C
RHRG7570 Harris Corporation

RHRG7570

DIODE AVALANCHE 700V 75A TO247

Harris Corporation

1,650 -
Datasheet - TO-247-3 Bulk Active Avalanche 700 V 75A 3 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 500 µA @ 700 V - - - Through Hole TO-247 -65°C ~ 175°C
RHRG75100 Harris Corporation

RHRG75100

DIODE AVALANCHE 1KV 75A TO247

Harris Corporation

750 -
Datasheet - TO-247-3 Bulk Active Avalanche 1000 V 75A 3 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 500 µA @ 1000 V - - - Through Hole TO-247 -65°C ~ 175°C
WNSC6D10650Q WeEn Semiconductors

WNSC6D10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

935 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
APT60DQ60SG Microchip Technology

APT60DQ60SG

DIODE GEN PURP 60A D3PAK

Microchip Technology

122 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Standard - 60A 2.4 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 25 µA @ 600 V - - - Surface Mount D3PAK -55°C ~ 175°C
RURG3080 Harris Corporation

RURG3080

DIODE AVALANCHE 800V 30A TO247

Harris Corporation

1,672 -
Datasheet - TO-247-3 Bulk Active Avalanche 800 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 800 V - - - Through Hole TO-247 -65°C ~ 175°C
1N4246 Harris Corporation

1N4246

DIODE GEN PURP 400V 1A AXIAL

Harris Corporation

6,102 -
Datasheet - Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 400 V - - - Through Hole Axial -65°C ~ 175°C
SICR10650 SMC Diode Solutions

SICR10650

DIODE SIL CARB 650V 10A TO220AC

SMC Diode Solutions

168 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 695pF @ 0V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PSDB3060S1_T0_00001 Panjit International Inc.

PSDB3060S1_T0_00001

TO-263, FRED

Panjit International Inc.

2,000 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 250 µA @ 600 V - - - Surface Mount TO-263 -55°C ~ 150°C
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COMPONENT SOURCING SUPPORT

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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.

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