Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 |
6,617 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP1065G1_T0_00001TO-220AC, SIC |
1,478 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
4,000 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
IV1D06006P3DIODE SIL CARB 650V 16.7A TO252 |
601 |
1+:$1.93000 10+:$1.22800 50+:$0.92280 100+:$0.82420 500+:$0.65134 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
|
FFSPF1065ADIODE SIC 650V 10A TO220F-2FS |
930 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,797 | - |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
STPSC1006DDIODE SIL CARB 600V 10A TO220AC |
166 | - |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
WNSC6D16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
2,665 | - |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
C6D10065ADIODE SIL CARB 650V 37A TO220-2 |
442 | - |
|
Datasheet | Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPSC12H065DYDIODE SIL CARB 650V 12A TO220AC |
219 | - |
|
Datasheet | ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 600pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFH75H60SDIODE GEN PURP 600V 75A TO247-2 |
1,196 | - |
|
Datasheet | - | TO-247-2 | Tube | Obsolete | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F |
472 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
UJ3D1210KSDDIODE SIL CARB 1.2KV 5A TO247-3 |
528 | - |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
SSTPAD100 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
6,215 | - |
|
Datasheet | PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
RURU50100DIODE AVALANCHE 1KV 50A TO218 |
2,668 | - |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 1.9 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
JPAD100 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
940 | - |
|
Datasheet | PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
PAD100 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
2,990 | - |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
PCFFS4065AFDIODE SIL CARBIDE 650V 40A DIE |
1,364 | - |
|
Datasheet | - | Die | Tray | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pf @ 1V, 100kHz | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
PAD50DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 | - |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
LSIC2SD065C08ADIODE SIL CARB 650V 23A TO252 |
2,288 | - |
|
Datasheet | Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.