PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PCDP05120G1_T0_00001 Panjit International Inc.

PCDP05120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,943 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 252pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1265G1_T0_00001 Panjit International Inc.

PCDP1265G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 452pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
NXPSC06650X6Q WeEn Semiconductors

NXPSC06650X6Q

DIODE SIL CARBIDE 650V 6A TO220F

WeEn Semiconductors

197 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
IDH10S60CAKSA1 Infineon Technologies

IDH10S60CAKSA1

DIODE SIL CARB 600V 10A TO220-2

Infineon Technologies

6,184 -
Datasheet CoolSiC™+ TO-220-2 Bulk Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 140 µA @ 600 V 480pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
PCDP0665G1_T0_00001 Panjit International Inc.

PCDP0665G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,998 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 228pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
WND45P16WQ WeEn Semiconductors

WND45P16WQ

DIODE GEN PURP 1.6KV 45A TO247-2

WeEn Semiconductors

1,008 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 45A 1.4 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V - - - Through Hole TO-247-2 150°C
MUR6060B-BP Micro Commercial Co

MUR6060B-BP

DIODE GEN PURP 600V 60A TO247AD

Micro Commercial Co

512 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 1.7 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 15 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
FFSB0465A onsemi

FFSB0465A

DIODE SIL CARB 650V 7.7A D2PAK-2

onsemi

770 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 7.7A 1.75 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 258pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
CDBJFSC5650-G Comchip Technology

CDBJFSC5650-G

DIODE SIL CARBIDE 650V 5A TO220F

Comchip Technology

346 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 430pF @ 0V, 1MHz - - Through Hole TO-220F -55°C ~ 175°C
SICRF10650 SMC Diode Solutions

SICRF10650

DIODE SIL CARB 650V 10A ITO220AC

SMC Diode Solutions

194 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 695pF @ 0V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PSDH6060L1_T0_00001 Panjit International Inc.

PSDH6060L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,425 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 1.75 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 205 ns 250 µA @ 600 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
MBRB2515LT4G onsemi

MBRB2515LT4G

DIODE SCHOTTKY 15V 25A D2PAK

onsemi

214 -
Datasheet SWITCHMODE™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete Schottky 15 V 25A 450 mV @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 15 mA @ 15 V - - - Surface Mount D2PAK 100°C (Max)
S3D20065E SMC Diode Solutions

S3D20065E

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

2,500 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active - - - - - - - - - - Surface Mount 5-DFN (8x8) -
STPSC6H12B-TR1 STMicroelectronics

STPSC6H12B-TR1

DIODE SIL CARBIDE 1.2KV 6A DPAK

STMicroelectronics

7,403 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 6A 1.9 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 330pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
VS-100BGQ030 Vishay General Semiconductor - Diodes Division

VS-100BGQ030

DIODE SCHOTTKY 30V 100A POWIRTAB

Vishay General Semiconductor - Diodes Division

144 -
Datasheet - PowerTab™, PowIRtab™ Bulk Obsolete Schottky 30 V 100A 580 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 2.4 mA @ 30 V - - - Chassis Mount PowIRtab™ -55°C ~ 150°C
RHRU75100 Harris Corporation

RHRU75100

DIODE AVALANCHE 1KV 75A TO218

Harris Corporation

149 -
Datasheet - TO-218-1 Bulk Active Avalanche 1000 V 75A 3 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 500 µA @ 1000 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RHRU7540 Harris Corporation

RHRU7540

DIODE AVALANCHE 400V 75A TO218

Harris Corporation

549 -
Datasheet - TO-218-1 Bulk Active Avalanche 400 V 75A 2.1 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 µA @ 400 V - - - Chassis Mount TO-218 -65°C ~ 175°C
FFSPF0665A onsemi

FFSPF0665A

DIODE SIC 650V 6A TO220F-2FS

onsemi

898 -
Datasheet - TO-220-2 Full Pack Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Through Hole TO-220F-2FS -55°C ~ 175°C
IV1D06006O2 Inventchip

IV1D06006O2

DIODE SIL CARB 650V 17.4A TO220

Inventchip

132 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 17.4A 1.65 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V 212pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
CDBD2SC21200-G Comchip Technology

CDBD2SC21200-G

DIODE SIL CARB 1.2KV 6.2A TO263

Comchip Technology

381 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 6.2A 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 136pF @ 0V, 1MHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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