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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G50N03K Goford Semiconductor

G50N03K

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor

4,483 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1245 pF @ 15 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G15P04K Goford Semiconductor

G15P04K

P40V,RD(MAX)<39M@-10V,RD(MAX)<70

Goford Semiconductor

4,460 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 15A (Tc) 4.5V, 10V 39mOhm @ 10A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 930 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G23N06K Goford Semiconductor

G23N06K

N60V,RD(MAX)<35M@10V,RD(MAX)<45M

Goford Semiconductor

3,415 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 35mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1343 pF @ 15 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G6K8P15KE Goford Semiconductor

G6K8P15KE

MOSFET P-CH ESD 150V 12A TO-252

Goford Semiconductor

2,308 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 10V 800mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 1550 pF @ 75 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT007N04TL Goford Semiconductor

GT007N04TL

N40V,150A,RD<1.5M@10V,VTH1.0V~2.

Goford Semiconductor

2,000 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.5mOhm @ 30A, 10V 2.5V @ 250µA 163 nC @ 10 V ±20V 7363 pF @ 20 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
G085P02TS Goford Semiconductor

G085P02TS

P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V

Goford Semiconductor

4,480 -
Datasheet - 8-TSSOP (0.173", 4.40mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 8.2A (Tc) 1.8V, 4.5V 8.5mOhm @ 4.2A, 4.5V 900mV @ 250µA 29 nC @ 10 V ±8V 1255 pF @ 10 V - 1.05W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
G300P06S Goford Semiconductor

G300P06S

P-CH,-60V,-12A,RD(MAX)<30M@-10V,

Goford Semiconductor

3,391 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 30mOhm @ 8A, 10V 3V @ 250µA 49 nC @ 10 V ±20V 2719 pF @ 30 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G40P03K Goford Semiconductor

G40P03K

P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<

Goford Semiconductor

1,375 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2622 pF @ 15 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G130N06S Goford Semiconductor

G130N06S

MOSFET, N-CH,60V,9A,RD(MAX)<12M@

Goford Semiconductor

3,990 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 3068 pF @ 30 V - 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G06N06S Goford Semiconductor

G06N06S

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor

6,020 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 22mOhm @ 6A, 10V 2.4V @ 250µA 46 nC @ 10 V ±20V 2477 pF @ 30 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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FETs, MOSFETs FAQ

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