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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G08N06S Goford Semiconductor

G08N06S

N60V, RD(MAX)<30M@10V,RD(MAX)<40

Goford Semiconductor

7,654 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 30mOhm @ 3A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 1360 pF @ 30 V - 2.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G120N03D3 Goford Semiconductor

G120N03D3

MOSFET N-CH 30V 28A DFN3*3-8L

Goford Semiconductor

5,000 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 1077 pF @ 15 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
GT10N10 Goford Semiconductor

GT10N10

N100V, 7A,RD<140M@10V,VTH1.5V~2.

Goford Semiconductor

4,267 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Tc) 4.5V, 10V 80mOhm @ 3.5A, 10V 2.5V @ 250µA 5 nC @ 10 V ±20V 205 pF @ 50 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G160N04K Goford Semiconductor

G160N04K

N40V, 25A,RD<15M@10V,VTH1.0V~2.0

Goford Semiconductor

4,779 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Tc) 4.5V, 10V 15mOhm @ 8A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1010 pF @ 20 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G700P06D5 Goford Semiconductor

G700P06D5

P-60V,-25A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

4,149 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1451 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G10P03 Goford Semiconductor

G10P03

P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3

Goford Semiconductor

4,127 -
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 2.5V, 4.5V 28mOhm @ 10A, 4.5V 1.5V @ 250µA 44 nC @ 4.5 V ±12V 2067 pF @ 15 V - 21.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G16N03S Goford Semiconductor

G16N03S

N30V, 16A,RD<10M@10V,VTH1.0V~2.5

Goford Semiconductor

3,624 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 5V, 10V 10mOhm @ 10A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 1321 pF @ 15 V - 3.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G160P03KI Goford Semiconductor

G160P03KI

P-30V,-30A,RD(MAX)<16M@-10V,VTH-

Goford Semiconductor

3,411 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.5V @ 250µA 31.2 nC @ 10 V ±20V 1811 pF @ 15 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G50N03J Goford Semiconductor

G50N03J

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor

3,296 -
Datasheet TrenchFET® TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA 16.6 nC @ 10 V ±20V 1255 pF @ 15 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-251
G12P06K Goford Semiconductor

G12P06K

P-60V,-12A,RD(MAX)<75M@-10V,VTH-

Goford Semiconductor

2,500 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 70mOhm @ 6A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1322 pF @ 30 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
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FETs, MOSFETs FAQ

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