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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G3K8N15KE Goford Semiconductor

G3K8N15KE

MOSFET N-CH ESD 150V 6A TO-252

Goford Semiconductor

2,450 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150 V 6A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 549 pF @ 75 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G6P06 Goford Semiconductor

G6P06

P60V,RD(MAX)<96M@-10V,RD(MAX)<14

Goford Semiconductor

11,970 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.5A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1378 pF @ 30 V - 1.14W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G11S Goford Semiconductor

G11S

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

Goford Semiconductor

1,660 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 18.4mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2470 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2014 Goford Semiconductor

G2014

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

Goford Semiconductor

2,940 -
Datasheet TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Tc) 2.5V, 10V 7mOhm @ 5A, 10V 900mV @ 250µA 17.5 nC @ 4.5 V ±12V 1710 pF @ 10 V - 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
GT6K2P10KH Goford Semiconductor

GT6K2P10KH

MOSFET P-CH 100V 4.3A TO-252

Goford Semiconductor

2,310 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 670mOhm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 247 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G35N02K Goford Semiconductor

G35N02K

N20V,RD(MAX)<13M@4.5V,RD(MAX)<18

Goford Semiconductor

1,769 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 4.5V 9mOhm @ 20A, 4.5V 1.2V @ 250µA 24 nC @ 4.5 V ±12V 1380 pF @ 10 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G28N03D3 Goford Semiconductor

G28N03D3

N30V,RD(MAX)<12M@10V,RD(MAX)<18M

Goford Semiconductor

5,000 -
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 12mOhm @ 16A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 896 pF @ 15 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G170P03D3 Goford Semiconductor

G170P03D3

P-30V, -20A,RD<18M@-10V,VTH-1V~-

Goford Semiconductor

5,000 -
Datasheet TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 5A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1805 pF @ 15 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G450P04K Goford Semiconductor

G450P04K

MOSFET, P-CH,-40V,-11A,RD(MAX)<4

Goford Semiconductor

2,400 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Tc) 4.5V, 10V 40mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 983 pF @ 20 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G06N10 Goford Semiconductor

G06N10

N100V,RD(MAX)<240M@10V,VTH1.2V~3

Goford Semiconductor

4,602 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 4.5V, 10V 240mOhm @ 6A, 10V 3V @ 250µA 6.2 nC @ 10 V ±20V 190 pF @ 50 V - 25W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
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FETs, MOSFETs FAQ

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