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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
25P06 Goford Semiconductor

25P06

P60V,RD(MAX)<45M@-10V,VTH2V~3V T

Goford Semiconductor

3,714 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 10V 32mOhm @ 12A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 2527 pF @ 30 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
45P40 Goford Semiconductor

45P40

P40V,RD(MAX)<14M@-10V,VTH2V~3V T

Goford Semiconductor

8,281 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 10V 14mOhm @ 20A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 2960 pF @ 20 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G20P10KE Goford Semiconductor

G20P10KE

P-CH, -100V, 20A, RD(MAX)<116M@-

Goford Semiconductor

2,433 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 116mOhm @ 16A, 10V 3V @ 250µA 70 nC @ 10 V ±20V 3354 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G75P04S Goford Semiconductor

G75P04S

MOSFET, P-CH,-40V,-11A,RD(MAX)<8

Goford Semiconductor

1,910 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Tc) 4.5V, 10V 8mOhm @ 10A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 6893 pF @ 20 V - 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G050P03S Goford Semiconductor

G050P03S

P-30V,-25A,RD(MAX)<5.5M@-10V,VTH

Goford Semiconductor

3,994 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 5.5mOhm @ 10A, 10V 2.5V @ 250µA 111 nC @ 10 V ±20V 7221 pF @ 15 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G130N06M Goford Semiconductor

G130N06M

N60V, 90A,RD<12M@10V,VTH1.0V~2.4

Goford Semiconductor

780 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2.4V @ 250µA 36.6 nC @ 10 V ±20V 2867 pF @ 30 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT095N10S Goford Semiconductor

GT095N10S

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

Goford Semiconductor

3,990 -
Datasheet SGT 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 4.5V, 10V 10.5mOhm @ 20A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 1628 pF @ 50 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G75P04D5 Goford Semiconductor

G75P04D5

MOSFET P-CH 40V 70A DFN5*6-8L

Goford Semiconductor

1,992 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 6mOhm @ -20A, -10V 2.5V @ 250µA 106 nC @ 10 V ±20V 6697 pF @ 20 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
18N20 Goford Semiconductor

18N20

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Goford Semiconductor

1,815 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 190mOhm @ 9A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 847 pF @ 25 V - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G170P06M Goford Semiconductor

G170P06M

MOSFET P-CH 60V 65A TO-263

Goford Semiconductor

638 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 17mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6451 pF @ 30 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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