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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT023N10M Goford Semiconductor

GT023N10M

N100V,140A,RD<2.7M@10V,VTH2.7V~4

Goford Semiconductor

800 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 226A (Tc) 10V 2.7mOhm @ 20A, 10V 4.3V @ 250µA 121 nC @ 10 V ±20V 8148 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263
G86N06K Goford Semiconductor

G86N06K

N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,

Goford Semiconductor

4,960 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 8mOhm @ 4A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2860 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
GT095N10K Goford Semiconductor

GT095N10K

N100V, RD(MAX)<10.5M@10V,RD(MAX)

Goford Semiconductor

6,422 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 1667 pF @ 50 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT095N10D5 Goford Semiconductor

GT095N10D5

N100V,RD(MAX)<11M@10V,RD(MAX)<15

Goford Semiconductor

14,841 -
Datasheet SGT 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 1683 pF @ 50 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT1K2P15K Goford Semiconductor

GT1K2P15K

MOSFET P-CH 150V 27A TO-252

Goford Semiconductor

2,500 -
Datasheet - - Tape & Reel (TR) Active - MOSFET (Metal Oxide) - 27A (Tc) 4.5V, 10V 110mOhm @ 15A, 10V 3V @ 250µA 86 nC @ 10 V ±20V 3275 pF @ 75 V - - -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT2K0P20K Goford Semiconductor

GT2K0P20K

MOSFET P-CH 200V 18A 138W 220M(M

Goford Semiconductor

2,500 -
Datasheet SGT - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V, 4.5V 220mOhm @ 15A, 10V 3V @ 250µA 70 nC @ 10 V 20V 3400 pF @ 100 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
GT400P10K Goford Semiconductor

GT400P10K

MOSFET P-CH 100V 35A TO-252

Goford Semiconductor

1,205 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 35mOhm @ 10A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 3128 pF @ 50 V - 106W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT100N12D5 Goford Semiconductor

GT100N12D5

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

5,000 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 70A - 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
G100N03D5 Goford Semiconductor

G100N03D5

N-CH, 30V, 100A, RD(MAX)<3.5M@10

Goford Semiconductor

4,885 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 5595 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT2K0P20D5 Goford Semiconductor

GT2K0P20D5

MOSFET P-CH 200V 19A 138W 200M(M

Goford Semiconductor

5,000 -
Datasheet SGT 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 10V, 4.5V 200mOhm @ 15A, 10V 3V @ 250µA 70 nC @ 10 V 20V 3400 pF @ 100 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
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FETs, MOSFETs FAQ

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