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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT105N10T Goford Semiconductor

GT105N10T

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor

112 -
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 1625 pF @ 50 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT090N06MH Goford Semiconductor

GT090N06MH

MOSFET N-CH 60V 45A 52W 11M(MAX

Goford Semiconductor

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 10V 11mOhm @ 15A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1050 pF @ 30 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
G65P06T Goford Semiconductor

G65P06T

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Goford Semiconductor

134 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6390 pF @ 30 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G65P06D5 Goford Semiconductor

G65P06D5

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

Goford Semiconductor

4,667 -
Datasheet TrenchFET® 8-PowerTDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6138 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G050P03K Goford Semiconductor

G050P03K

P-30V,-85A,RD(MAX)<4.5M@-10V,VTH

Goford Semiconductor

1,618 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 85A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 111 nC @ 10 V ±20V 7533 pF @ 15 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT750P10D5 Goford Semiconductor

GT750P10D5

MOSFET P-CH 100V 24A 79W 60M(MAX

Goford Semiconductor

5,000 -
Datasheet SGT 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V, 4.5V 60mOhm @ 10A, 10V 2.5V @ 250µA 40 nC @ 10 V 20V 1930 pF @ 50 V - 79W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT100P06K Goford Semiconductor

GT100P06K

MOSFET P-CH 60V 60A 104W 8M(MAX

Goford Semiconductor

2,428 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 2.5V @ 250µA 47 nC @ 10 V ±20V 3600 pF @ 30 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT750P10M Goford Semiconductor

GT750P10M

MOSFET P-CH 100V 24A TO-263

Goford Semiconductor

768 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 4.5V, 10V 65mOhm @ 20A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1902 pF @ 50 V - 79W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT105N10K Goford Semiconductor

GT105N10K

MOSFET, N-CH, 100V,60A,TO-252

Goford Semiconductor

2,593 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 10.5mOhm @ 35A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 1574 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT130N10M Goford Semiconductor

GT130N10M

MOSFET N-CH 100V 60A TO-263

Goford Semiconductor

748 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1222 pF @ 50 V - 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
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FETs, MOSFETs FAQ

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