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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT180P08D5 Goford Semiconductor

GT180P08D5

MOSFET P-CH 80V 78A 178W 18M(MAX

Goford Semiconductor

5,000 -
Datasheet SGT 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 78A (Tc) 10V 18mOhm @ 20A, 10V 2.5V @ 250µA 62.1 nC @ 10 V 20V 6998 pF @ 40 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT52N10D5 Goford Semiconductor

GT52N10D5

N100V,RD(MAX)<7.5M@10V,RD(MAX)<1

Goford Semiconductor

16,203 -
Datasheet SGT 8-PowerTDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 71A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2870 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
GT180P08M Goford Semiconductor

GT180P08M

MOSFET, P-CH,-80V,-89A,RD(MAX)<1

Goford Semiconductor

796 -
Datasheet - - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
GT080N10M Goford Semiconductor

GT080N10M

N100V, 70A,RD<7.5M@10V,VTH1V~3V,

Goford Semiconductor

265 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2915 pF @ 50 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
G1K3N10G Goford Semiconductor

G1K3N10G

N100V, 5A,RD<130M@10V,VTH1V~2V,

Goford Semiconductor

215 -
Datasheet TrenchFET® TO-243AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 5A (Tc) 4.5V, 10V 130mOhm @ 5A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 644 pF @ 50 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-89
G120P06M Goford Semiconductor

G120P06M

MOSFET P-CH 60V 120A 277W 8.5M(M

Goford Semiconductor

800 -
Datasheet Trench - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 8.5mOhm @ 20A, 10V 3V @ 250µA 230 nC @ 10 V 20V 12215 pF @ 30 V - 277W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
G900P15M Goford Semiconductor

G900P15M

MOSFET P-CH 150V 35A TO263

Goford Semiconductor

444 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 80mOhm @ -5A, -10V 4V @ 250µA 27 nC @ 10 V ±20V 4056 pF @ 75 V - 198W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GC11N65K Goford Semiconductor

GC11N65K

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

2,212 -
Datasheet SuperJunction TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GT065P06M Goford Semiconductor

GT065P06M

MOSFET P-CH 60V 103A 178W 9M(MAX

Goford Semiconductor

780 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 103A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 5985 pF @ 30 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
GT100N12M Goford Semiconductor

GT100N12M

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

708 -
Datasheet SGT TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
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FETs, MOSFETs FAQ

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