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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G7P03L Goford Semiconductor

G7P03L

P30V,RD(MAX)<23M@-10V,RD(MAX)<34

Goford Semiconductor

4,199 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 7A (Tc) 4.5V, 10V 23mOhm @ 3A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1500 pF @ 15 V - 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G1002L Goford Semiconductor

G1002L

N100V,RD(MAX)<250M@10V,VTH1.2V~2

Goford Semiconductor

2,934 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 4.5V, 10V 250mOhm @ 2A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 413 pF @ 50 V - 1.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G2K3N10H Goford Semiconductor

G2K3N10H

MOSFET, N-CH,100V, 2A,SOT-223

Goford Semiconductor

1,585 -
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 4.5V, 10V 220mOhm @ 2A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 434 pF @ 50 V - 2.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G700P06LL Goford Semiconductor

G700P06LL

MOSFET, P-CH,-60V,-5A,RD(MAX)<75

Goford Semiconductor

2,619 -
Datasheet TrenchFET® SOT-23-6 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 75mOhm @ 3.2A, 10V 3V @ 250µA 15.8 nC @ 10 V ±20V 1456 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G220P02D2 Goford Semiconductor

G220P02D2

P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-

Goford Semiconductor

2,965 -
Datasheet TrenchFET® 6-UDFN Exposed Pad Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 4.5V, 10V 20mOhm @ 6A, 10V 1.2V @ 250µA 14 nC @ 10 V ±12V 1873 pF @ 10 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
G7K2N20LLE Goford Semiconductor

G7K2N20LLE

N-PH,200V, ESD,2A,RD<0.7@10V,VTH

Goford Semiconductor

2,648 -
Datasheet TrenchFET® SOT-23-6 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 11 nC @ 10 V ±20V 531 pF @ 100 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G2003A Goford Semiconductor

G2003A

N190V, 3A,RD<540M@10V,VTH1.0V~3.

Goford Semiconductor

2,880 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 190 V 3A (Tc) 4.5V, 10V 540mOhm @ 2A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 580 pF @ 25 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
06N06L Goford Semiconductor

06N06L

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

Goford Semiconductor

3,550 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A 4.5V, 10V 45mOhm @ 3A, 10V 2.5V @ 250µA 8.9 nC @ 10 V ±20V 765 pF @ 30 V - 960mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G01N20LE Goford Semiconductor

G01N20LE

N200V,RD(MAX)<850M@10V,RD(MAX)<9

Goford Semiconductor

4,704 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 580 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G05P06L Goford Semiconductor

G05P06L

P60V,RD(MAX)<120M@-10V,RD(MAX)<1

Goford Semiconductor

2,957 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 80mOhm @ 4A, 10V 2.5V @ 250µA 37 nC @ 10 V ±20V 1376 pF @ 50 V - 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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FETs, MOSFETs FAQ

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