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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G700P06H Goford Semiconductor

G700P06H

P-60V,-5A,RD(MAX)<75M@-10V,VTH-1

Goford Semiconductor

4,784 -
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V 2.5V @ 250µA 15.8 nC @ 10 V ±20V 1459 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G7K2N20HE Goford Semiconductor

G7K2N20HE

N200V, ESD,2A,RD<0.7@10V,VTH1V~2

Goford Semiconductor

2,501 -
Datasheet TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 10.8 nC @ 10 V ±20V 568 pF @ 100 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G3K8N15HE Goford Semiconductor

G3K8N15HE

MOSFET N-CH ESD 150V 2A SOT-223

Goford Semiconductor

2,490 -
Datasheet TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 4.5V, 10V 370mOhm @ 2A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 558 pF @ 75 V - 2.16W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G090P02S Goford Semiconductor

G090P02S

MOSFET P-CH 20V 11A SOP-8

Goford Semiconductor

4,000 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 2.5V, 4.5V 9mOhm @ 1A, 4.5V 1.1V @ 250µA 47 nC @ 10 V ±12V 2225 pF @ 10 V - 3.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
GT100N04D3 Goford Semiconductor

GT100N04D3

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

Goford Semiconductor

6,800 -
Datasheet SGT 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 13A (Tc) 4.5V, 10V 10mOhm @ 5A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 642 pF @ 20 V - 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
GT095N04D3 Goford Semiconductor

GT095N04D3

MOSFET N-CH 40V 47A DFN3*3-8L

Goford Semiconductor

4,049 -
Datasheet SGT 8-PowerVDFN Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Tc) 4.5V, 10V 6mOhm @ 3A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 947 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G33N03S Goford Semiconductor

G33N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<13M

Goford Semiconductor

3,930 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 12mOhm @ 8A, 10V 1.1V @ 250µA 13 nC @ 15 V ±20V 1550 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G10N03S Goford Semiconductor

G10N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<16M

Goford Semiconductor

3,500 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Tc) 4.5V, 10V 9mOhm @ 6A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 832 pF @ 15 V - 2.23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G7P03S Goford Semiconductor

G7P03S

P30V,RD(MAX)<22M@-10V,RD(MAX)<33

Goford Semiconductor

3,454 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 22mOhm @ 3A, 10V 2V @ 250µA 24.5 nC @ 10 V ±20V 1253 pF @ 15 V - 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2012 Goford Semiconductor

G2012

N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

Goford Semiconductor

2,944 -
Datasheet TrenchFET® 6-WDFN Exposed Pad Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 12mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 10 V ±10V 1255 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
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FETs, MOSFETs FAQ

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