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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMZA75R040M1HXKSA1 Infineon Technologies

AIMZA75R040M1HXKSA1

IGBT

Infineon Technologies

229 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMZA65R033M2HXKSA1 Infineon Technologies

IMZA65R033M2HXKSA1

IMZA65R033M2HXKSA1

Infineon Technologies

390 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
IMBG40R015M2HXTMA1 Infineon Technologies

IMBG40R015M2HXTMA1

SIC-MOS

Infineon Technologies

939 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
GS-065-030-6-LL-MR Infineon Technologies

GS-065-030-6-LL-MR

GAN POWER TRANSISTOR

Infineon Technologies

195 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 40A (Tc) 6V 58mOhm @ 5.5A, 6V 2.6V @ 7.5mA 6.7 nC @ 6 V +7V, -10V 235 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount TOLL
IPWS65R022CFD7AXKSA1 Infineon Technologies

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies

238 -
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-31
IPDQ60R025CFD7XTMA1 Infineon Technologies

IPDQ60R025CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

725 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 10V 25mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5626 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
AIMZHN120R080M1TXKSA1 Infineon Technologies

AIMZHN120R080M1TXKSA1

SIC_DISCRETE

Infineon Technologies

233 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +23V, -5V 671 pF @ 800 V - 169W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
IMDQ75R027M1HXUMA1 Infineon Technologies

IMDQ75R027M1HXUMA1

IMDQ75R027M1HXUMA1

Infineon Technologies

708 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +20V, -2V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
IPQC60R017S7XTMA1 Infineon Technologies

IPQC60R017S7XTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60R017S7XTMA1 Infineon Technologies

IPDQ60R017S7XTMA1

MOSFET

Infineon Technologies

695 -
Datasheet CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
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FETs, MOSFETs FAQ

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