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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC030N10NS5SCATMA1 Infineon Technologies

BSC030N10NS5SCATMA1

TRENCH >=100V

Infineon Technologies

90 -
Datasheet OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 171A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 115µA 88 nC @ 10 V ±20V 6500 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WSON-8-2
IAUT300N08S5N014ATMA1 Infineon Technologies

IAUT300N08S5N014ATMA1

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies

71 -
Datasheet OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 300A (DC) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-1
IPP030N10N3GXKSA1 Infineon Technologies

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

45 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IMZ120R030M1HXKSA1 Infineon Technologies

IMZ120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-4

Infineon Technologies

88 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-1
IMBG120R012M2HXTMA1 Infineon Technologies

IMBG120R012M2HXTMA1

SIC DISCRETE

Infineon Technologies

31 -
Datasheet CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 144A (Tc) 15V, 18V 12.2mOhm @ 56.7A, 18V 5.1V @ 17.8mA 124 nC @ 18 V +23V, -10V 4050 pF @ 800 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
AIMBG120R010M1XTMA1 Infineon Technologies

AIMBG120R010M1XTMA1

SIC_DISCRETE

Infineon Technologies

13 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 187A - - - - - - - - -55°C ~ 175°C - - Surface Mount PG-TO263-7-12
IMW120R007M1HXKSA1 Infineon Technologies

IMW120R007M1HXKSA1

SIC DISCRETE

Infineon Technologies

88 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 225A (Tc) 15V, 18V 9.9mOhm @ 108A, 18V 5.2V @ 47mA 289 nC @ 18 V +20V, -5V 9170 pF @ 800 V - 750W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3
IPD031N03LGATMA1 Infineon Technologies

IPD031N03LGATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies

822 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
BSP135IXTSA1 Infineon Technologies

BSP135IXTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies

1,023 -
Datasheet - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 3.7 nC @ 5 V ±20V 98 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
ISP12DP06NMXTSA1 Infineon Technologies

ISP12DP06NMXTSA1

MOSFET P-CH 60V 2.8A SOT223-4

Infineon Technologies

1,060 -
Datasheet OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) 10V 125mOhm @ 2.8A, 10V 4V @ 520µA 20.2 nC @ 10 V ±20V 790 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
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FETs, MOSFETs FAQ

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