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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPDQ60R040S7AXTMA1 Infineon Technologies

IPDQ60R040S7AXTMA1

MOSFET

Infineon Technologies

720 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V - - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IMZA65R060M2HXKSA1 Infineon Technologies

IMZA65R060M2HXKSA1

IMZA65R060M2HXKSA1

Infineon Technologies

400 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 32.8A (Tc) 15V, 20V 55mOhm @ 15.4A, 20V 5.6V @ 3.1mA 19 nC @ 18 V +23V, -7V 669 pF @ 400 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
AIMZA75R090M1HXKSA1 Infineon Technologies

AIMZA75R090M1HXKSA1

AUTOMOTIVE_SICMOS

Infineon Technologies

229 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 23A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 113W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
IMBG40R025M2HXTMA1 Infineon Technologies

IMBG40R025M2HXTMA1

SIC-MOS

Infineon Technologies

900 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 9A (Ta), 68A (Tc) 15V, 18V 32.1mOhm @ 15.7A, 18V 5.6V @ 5.6mA 36 nC @ 18 V +23V, -7V 1690 pF @ 200 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
AIMCQ120R080M1TXTMA1 Infineon Technologies

AIMCQ120R080M1TXTMA1

SIC_DISCRETE

Infineon Technologies

770 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 34A (Tc) 18V, 20V 100mOhm @ 10A, 20V 5.1V @ 3.3mA 24 nC @ 20 V +25V, -10V 671 pF @ 800 V - 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPDQ60R035CFD7XTMA1 Infineon Technologies

IPDQ60R035CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Surface Mount PG-HDSOP-22-1
IMLT65R040M2HXTMA1 Infineon Technologies

IMLT65R040M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

327 -
Datasheet - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPDQ65R040CFD7AXTMA1 Infineon Technologies

IPDQ65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

392 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPQC65R040CFD7AXTMA1 Infineon Technologies

IPQC65R040CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

200 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 40mOhm @ 24.8A, 10V 4.5V @ 1.24mA 97 nC @ 10 V ±20V 4975 pF @ 400 V - 357W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
IPZA60R037CM8XKSA1 Infineon Technologies

IPZA60R037CM8XKSA1

IPZA60R037CM8XKSA1

Infineon Technologies

195 -
Datasheet CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3458 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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