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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMZA75R040M1HXKSA1 Infineon Technologies

IMZA75R040M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

235 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
AIMCQ120R060M1TXTMA1 Infineon Technologies

AIMCQ120R060M1TXTMA1

SIC_DISCRETE

Infineon Technologies

850 -
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 44A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +25V, -10V 880 pF @ 800 V - 259W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
AIMZH120R160M1TXKSA1 Infineon Technologies

AIMZH120R160M1TXKSA1

SIC_DISCRETE

Infineon Technologies

207 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +23V, -5V 350 pF @ 800 V - 109W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
IMZC120R040M2HXKSA1 Infineon Technologies

IMZC120R040M2HXKSA1

IMZC120R040M2HXKSA1

Infineon Technologies

240 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 48A (Tc) 15V, 18V 40mOhm @ 18A, 18V 5.1V @ 5.5mA 39 nC @ 18 V +23V, -7V 1310 pF @ 800 V - 218W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
IPT60T022S7XTMA1 Infineon Technologies

IPT60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

218 -
Datasheet CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tj) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
IPQC60T022S7XTMA1 Infineon Technologies

IPQC60T022S7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
IMW65R033M2HXKSA1 Infineon Technologies

IMW65R033M2HXKSA1

IMW65R033M2HXKSA1

Infineon Technologies

369 -
Datasheet CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
IMT40R015M2HXTMA1 Infineon Technologies

IMT40R015M2HXTMA1

SIC-MOS

Infineon Technologies

1,942 -
Datasheet CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
IPDQ60R016CM8XTMA1 Infineon Technologies

IPDQ60R016CM8XTMA1

IPDQ60R016CM8XTMA1

Infineon Technologies

720 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
IPDQ60R022S7AXTMA1 Infineon Technologies

IPDQ60R022S7AXTMA1

MOSFET

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
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FETs, MOSFETs FAQ

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