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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW030Z120C,S1F Toshiba Semiconductor and Storage

TW030Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 3

Toshiba Semiconductor and Storage

105 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 41mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW015Z120C,S1F Toshiba Semiconductor and Storage

TW015Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 1

Toshiba Semiconductor and Storage

68 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C - - Through Hole TO-247-4L(X)
2SK1828TE85LF Toshiba Semiconductor and Storage

2SK1828TE85LF

MOSFET N-CH 20V 50MA SC59

Toshiba Semiconductor and Storage

1,367 -
Datasheet - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V 1.5V @ 100µA - 10V 5.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) - - Surface Mount SC-59
SSM3K56CT,L3F Toshiba Semiconductor and Storage

SSM3K56CT,L3F

MOSFET N-CH 20V 800MA CST3

Toshiba Semiconductor and Storage

14,906 -
Datasheet U-MOSVII-H SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 500mW (Ta) 150°C (TA) - - Surface Mount CST3
TK7R0E08QM,S1X Toshiba Semiconductor and Storage

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage

108 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C - - Through Hole TO-220
TPCA8026(TE12L,Q,M Toshiba Semiconductor and Storage

TPCA8026(TE12L,Q,M

MOSFET N-CH 30V 45A 8SOP

Toshiba Semiconductor and Storage

1,171 -
Datasheet U-MOSIV 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 2.2mOhm @ 23A, 10V 2.5V @ 1mA 113 nC @ 10 V ±20V 4200 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
SSM6J501NU,LF Toshiba Semiconductor and Storage

SSM6J501NU,LF

MOSFET P-CH 20V 10A 6UDFNB

Toshiba Semiconductor and Storage

468 -
Datasheet U-MOSVI 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.5V, 4.5V 15.3mOhm @ 4A, 4.5V 1V @ 1mA 29.9 nC @ 4.5 V ±8V 2600 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 6-UDFNB (2x2)
SSM3K341TU,LF Toshiba Semiconductor and Storage

SSM3K341TU,LF

MOSFET N-CH 60V 6A UFM

Toshiba Semiconductor and Storage

244 -
Datasheet U-MOSVIII-H 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.8W (Ta) 175°C - - Surface Mount UFM
SSM3K341R,LF Toshiba Semiconductor and Storage

SSM3K341R,LF

MOSFET N-CH 60V 6A SOT-23F

Toshiba Semiconductor and Storage

57 -
Datasheet U-MOSVIII-H SOT-23-3 Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.2W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount SOT-23F
TPHR9003NL1,LQ Toshiba Semiconductor and Storage

TPHR9003NL1,LQ

UMOS9 SOP-ADV(N) PD=78W F=1MHZ

Toshiba Semiconductor and Storage

52 -
Datasheet U-MOSVIII-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 1mA 74 nC @ 10 V ±20V 6900 pF @ 15 V - 800mW (Ta), 170W (Tc) 150°C - - Surface Mount 8-SOP Advance (5x5.75)
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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