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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW045N120C,S1F Toshiba Semiconductor and Storage

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Toshiba Semiconductor and Storage

71 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 59mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C - - Through Hole TO-247
SSM6G18NU,LF Toshiba Semiconductor and Storage

SSM6G18NU,LF

MOSFET P-CH 20V 2A 6UDFN

Toshiba Semiconductor and Storage

785 -
Datasheet - 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 112mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 270 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
SSM6J503NU,LF Toshiba Semiconductor and Storage

SSM6J503NU,LF

MOSFET P-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage

820 -
Datasheet U-MOSVI 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 32.4mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 10 V ±8V 840 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 6-UDFNB (2x2)
SSM6J216FE,LF Toshiba Semiconductor and Storage

SSM6J216FE,LF

MOSFET P-CHANNEL 12V 4.8A ES6

Toshiba Semiconductor and Storage

379 -
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4.8A (Ta) 1.5V, 4.5V 32mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7 nC @ 4.5 V ±8V 1040 pF @ 12 V - 700mW (Ta) 150°C - - Surface Mount ES6
TK30E06N1,S1X Toshiba Semiconductor and Storage

TK30E06N1,S1X

MOSFET N-CH 60V 43A TO220

Toshiba Semiconductor and Storage

69 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Ta) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 53W (Tc) 150°C (TJ) - - Through Hole TO-220
TK1K0A60F,S4X Toshiba Semiconductor and Storage

TK1K0A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

67 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 3.8A, 10V 4V @ 770µA 24 nC @ 10 V ±30V 890 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK3R1A04PL,S4X Toshiba Semiconductor and Storage

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage

77 -
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK5R3A06PL,S4X Toshiba Semiconductor and Storage

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

75 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C - - Through Hole TO-220SIS
TK4R3A06PL,S4X Toshiba Semiconductor and Storage

TK4R3A06PL,S4X

MOSFET N-CH 60V 68A TO220SIS

Toshiba Semiconductor and Storage

54 -
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK650A60F,S4X Toshiba Semiconductor and Storage

TK650A60F,S4X

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

74 -
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1.16mA 34 nC @ 10 V ±30V 1320 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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