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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK32A12N1,S4X Toshiba Semiconductor and Storage

TK32A12N1,S4X

MOSFET N-CH 120V 32A TO220SIS

Toshiba Semiconductor and Storage

66 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7R4A10PL,S4X Toshiba Semiconductor and Storage

TK7R4A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

100 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 7.4mOhm @ 25A, 10V 2.5V @ 500µA 44 nC @ 10 V ±20V 2800 pF @ 50 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK22E10N1,S1X Toshiba Semiconductor and Storage

TK22E10N1,S1X

MOSFET N CH 100V 52A TO220

Toshiba Semiconductor and Storage

31 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 72W (Tc) 150°C (TJ) - - Through Hole TO-220
TK6R7A10PL,S4X Toshiba Semiconductor and Storage

TK6R7A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

42 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 4.5V, 10V 6.7mOhm @ 28A, 10V 2.5V @ 500µA 58 nC @ 10 V ±20V 3455 pF @ 50 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK7A90E,S4X Toshiba Semiconductor and Storage

TK7A90E,S4X

MOSFET N-CH 900V 7A TO220SIS

Toshiba Semiconductor and Storage

49 -
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3R2E06PL,S1X Toshiba Semiconductor and Storage

TK3R2E06PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

88 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 168W (Tc) 175°C - - Through Hole TO-220
TK40A10N1,S4X Toshiba Semiconductor and Storage

TK40A10N1,S4X

MOSFET N-CH 100V 40A TO220SIS

Toshiba Semiconductor and Storage

26 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK33S10N1L,LQ Toshiba Semiconductor and Storage

TK33S10N1L,LQ

MOSFET N-CH 100V 33A DPAK

Toshiba Semiconductor and Storage

97 -
Datasheet U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C - - Surface Mount DPAK+
TK4R1A10PL,S4X Toshiba Semiconductor and Storage

TK4R1A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

50 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 40A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6320 pF @ 50 V - 54W (Tc) 175°C - - Through Hole TO-220SIS
TK10A60W5,S5VX Toshiba Semiconductor and Storage

TK10A60W5,S5VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

48 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 450mOhm @ 4.9A, 10V 4.5V @ 500µA 25 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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