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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2SK3564(STA4,Q,M) Toshiba Semiconductor and Storage

2SK3564(STA4,Q,M)

MOSFET N-CH 900V 3A TO220SIS

Toshiba Semiconductor and Storage

74 -
Datasheet π-MOSIV TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V 4V @ 1mA 17 nC @ 10 V ±30V 700 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A50D(STA4,Q,M)

MOSFET N-CH 500V 8A TO220SIS

Toshiba Semiconductor and Storage

95 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Ta) 10V 850mOhm @ 4A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPH2R306NH,L1Q Toshiba Semiconductor and Storage

TPH2R306NH,L1Q

MOSFET N-CH 60V 60A 8SOP

Toshiba Semiconductor and Storage

48 -
Datasheet U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6.5V, 10V 2.3mOhm @ 30A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6100 pF @ 30 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
TK12A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A50D(STA4,Q,M)

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage

49 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK15A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage

81 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK100E08N1,S1X Toshiba Semiconductor and Storage

TK100E08N1,S1X

MOSFET N-CH 80V 100A TO220

Toshiba Semiconductor and Storage

96 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 255W (Tc) 150°C (TJ) - - Through Hole TO-220
TK040N65Z,S1F Toshiba Semiconductor and Storage

TK040N65Z,S1F

MOSFET N-CH 650V 57A TO247

Toshiba Semiconductor and Storage

76 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C - - Through Hole TO-247
TW140N120C,S1F Toshiba Semiconductor and Storage

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage

70 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C - - Through Hole TO-247
TK042N65Z5,S1F(S Toshiba Semiconductor and Storage

TK042N65Z5,S1F(S

650V DTMOS6 HSD 42MOHM TO-247

Toshiba Semiconductor and Storage

86 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 55A (Ta) 10V 42mOhm @ 27.5A, 10V 4.5V @ 2.85mA 105 nC @ 10 V ±30V 6280 pF @ 300 V - 360W (Tc) 150°C - - Through Hole TO-247
TW045Z120C,S1F Toshiba Semiconductor and Storage

TW045Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 4

Toshiba Semiconductor and Storage

50 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 62mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C - - Through Hole TO-247-4L(X)
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FETs, MOSFETs FAQ

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