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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A55D(STA4,Q,M)

MOSFET N-CH 550V 7A TO220SIS

Toshiba Semiconductor and Storage

45 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7A (Ta) 10V 1.25Ohm @ 3.5A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK3A65D(STA4,Q,M)

MOSFET N-CH 650V 3A TO220SIS

Toshiba Semiconductor and Storage

26 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 3A (Ta) 10V 2.25Ohm @ 1.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A65DA(STA4,Q,M)

MOSFET N-CH 650V 4.5A TO220SIS

Toshiba Semiconductor and Storage

32 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Ta) 10V 1.67Ohm @ 2.3A, 10V 4.4V @ 1mA 16 nC @ 10 V ±30V 700 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A65D(STA4,Q,M)

MOSFET N-CH 650V 5A TO220SIS

Toshiba Semiconductor and Storage

28 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Ta) 10V 1.43Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK11A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage

50 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK56E12N1,S1X Toshiba Semiconductor and Storage

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage

52 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) - - Through Hole TO-220
TK8Q65W,S1Q Toshiba Semiconductor and Storage

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage

75 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage

48 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK18A30D,S5X Toshiba Semiconductor and Storage

TK18A30D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

48 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 300 V 18A (Ta) 10V 139mOhm @ 9A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2600 pF @ 100 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK11A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage

43 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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