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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK7E80W,S1X Toshiba Semiconductor and Storage

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage

70 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C - - Through Hole TO-220
TK14E65W,S1X Toshiba Semiconductor and Storage

TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

48 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK20A60W5,S5VX Toshiba Semiconductor and Storage

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

31 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4R9E15Q5,S1X Toshiba Semiconductor and Storage

TK4R9E15Q5,S1X

150V UMOS10-HSD TO-220 4.9MOHM

Toshiba Semiconductor and Storage

89 -
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 4.9mOhm @ 50A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 300W (Tc) 175°C - - Through Hole TO-220
TK18A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK18A50D(STA4,Q,M)

MOSFET N-CH 500V 18A TO220SIS

Toshiba Semiconductor and Storage

46 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK19A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK19A45D(STA4,Q,M)

MOSFET N-CH 450V 19A TO220SIS

Toshiba Semiconductor and Storage

31 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK080N60Z1,S1F Toshiba Semiconductor and Storage

TK080N60Z1,S1F

600V DTMOS6 TO-247 80MOHM

Toshiba Semiconductor and Storage

30 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 80mOhm @ 10.3A, 10V 4V @ 1.17mA 43 nC @ 10 V ±30V 2510 pF @ 300 V - 211W (Tc) 150°C - - Through Hole TO-247
TK12A60W,S4VX Toshiba Semiconductor and Storage

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

79 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK28E65W,S1X Toshiba Semiconductor and Storage

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

50 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-220
TK25E60X5,S1X Toshiba Semiconductor and Storage

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

100 -
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
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FETs, MOSFETs FAQ

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