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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK10Q60W,S1VQ Toshiba Semiconductor and Storage

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

Toshiba Semiconductor and Storage

75 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
TK13A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK13A45D(STA4,Q,M)

MOSFET N-CH 450V 13A TO220SIS

Toshiba Semiconductor and Storage

32 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 460mOhm @ 6.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8Q60W,S1VQ Toshiba Semiconductor and Storage

TK8Q60W,S1VQ

MOSFET N-CH 600V 8A IPAK

Toshiba Semiconductor and Storage

72 -
Datasheet DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) - - Through Hole IPAK
TK8A60W,S4VX Toshiba Semiconductor and Storage

TK8A60W,S4VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage

39 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK16E60W,S1VX Toshiba Semiconductor and Storage

TK16E60W,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

68 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK12E60W,S1VX Toshiba Semiconductor and Storage

TK12E60W,S1VX

MOSFET N CH 600V 11.5A TO-220

Toshiba Semiconductor and Storage

50 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
TK12A60D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A60D(STA4,Q,M)

MOSFET N-CH 600V 12A TO220SIS

Toshiba Semiconductor and Storage

88 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 550mOhm @ 6A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK10E80W,S1X Toshiba Semiconductor and Storage

TK10E80W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

50 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-220
TK10A60W,S4VX Toshiba Semiconductor and Storage

TK10A60W,S4VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

28 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK10A80W,S4X Toshiba Semiconductor and Storage

TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

Toshiba Semiconductor and Storage

49 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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