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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK25N60X,S1F Toshiba Semiconductor and Storage

TK25N60X,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage

26 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-247
TK090A65Z,S4X Toshiba Semiconductor and Storage

TK090A65Z,S4X

MOSFET N-CH 650V 30A TO220SIS

Toshiba Semiconductor and Storage

68 -
Datasheet DTMOSVI TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK28A65W,S5X Toshiba Semiconductor and Storage

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage

100 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK16J60W,S1VE Toshiba Semiconductor and Storage

TK16J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

42 -
Datasheet - TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-3P(N)
TK39J60W,S1VQ Toshiba Semiconductor and Storage

TK39J60W,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

12 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK040Z65Z,S1F Toshiba Semiconductor and Storage

TK040Z65Z,S1F

MOSFET N-CH 650V 57A TO247-4L

Toshiba Semiconductor and Storage

22 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C - - Through Hole TO-247-4L(T)
SSM5H90ATU,LF Toshiba Semiconductor and Storage

SSM5H90ATU,LF

MOSFET N-CH 20V 2.4A UFV

Toshiba Semiconductor and Storage

635 -
Datasheet - 5-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.5V, 4V 65mOhm @ 1.5A, 4V 1.2V @ 1mA 2.2 nC @ 4 V ±10V 200 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UFV
SSM6K781G,LF Toshiba Semiconductor and Storage

SSM6K781G,LF

MOSFET N-CH 12V 7A 6WCSP6C

Toshiba Semiconductor and Storage

569 -
Datasheet U-MOSVII-H 6-UFBGA, WLCSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 7A (Ta) 1.5V, 4.5V 18mOhm @ 1.5A, 4.5V 1V @ 250µA 5.4 nC @ 4.5 V ±8V 600 pF @ 6 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 6-WCSPC (1.5x1.0)
TK4A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK4A50D(STA4,Q,M)

MOSFET N-CH 500V 4A TO220SIS

Toshiba Semiconductor and Storage

35 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPH3R003PL,LQ Toshiba Semiconductor and Storage

TPH3R003PL,LQ

MOSFET N-CH 30V 88A 8SOP

Toshiba Semiconductor and Storage

54 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 88A (Tc) 4.5V, 10V 4.2mOhm @ 44A, 4.5V 2.1V @ 300µA 50 nC @ 10 V ±20V 3825 pF @ 15 V - 90W (Tc) 175°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
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FETs, MOSFETs FAQ

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