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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK2R9E10PL,S1X Toshiba Semiconductor and Storage

TK2R9E10PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,460 -
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 4.5V, 10V 2.9mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 306W (Tc) 175°C - - Through Hole TO-220
TK13A55DA(STA4,QM) Toshiba Semiconductor and Storage

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage

9,049 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK10J80E,S1E Toshiba Semiconductor and Storage

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

Toshiba Semiconductor and Storage

18 -
Datasheet π-MOSVIII TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TK14A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage

22 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK17E65W,S1X Toshiba Semiconductor and Storage

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage

23 -
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-220
TK14N65W,S1F Toshiba Semiconductor and Storage

TK14N65W,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage

16 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-247
TK125N60Z1,S1F Toshiba Semiconductor and Storage

TK125N60Z1,S1F

6OOV DTMOS6 TO-247 125MOHM

Toshiba Semiconductor and Storage

18 -
Datasheet DTMOSVI TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 125mOhm @ 6A, 10V 4V @ 730µA 28 nC @ 10 V ±30V 1620 pF @ 300 V - 150W (Tc) 150°C - - Through Hole TO-247
XPQ1R00AQB,LXHQ Toshiba Semiconductor and Storage

XPQ1R00AQB,LXHQ

100V UMOS10 L-TOGL 1.03MOHM

Toshiba Semiconductor and Storage

8,725 -
Datasheet U-MOSX-H 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Ta) 6V, 10V 1.03mOhm @ 150A, 10V 3.5V @ 1.5mA 269 nC @ 10 V ±20V 21450 pF @ 10 V - 750W (Tc) 175°C Automotive AEC-Q101 Surface Mount L-TOGL™
TK090Z65Z,S1F Toshiba Semiconductor and Storage

TK090Z65Z,S1F

MOSFET N-CH 650V 30A TO247-4L

Toshiba Semiconductor and Storage

25 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C - - Through Hole TO-247-4L(T)
TK110Z65Z,S1F Toshiba Semiconductor and Storage

TK110Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage

20 -
Datasheet DTMOSVI TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C - - Through Hole TO-247-4L(T)
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FETs, MOSFETs FAQ

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