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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK9A65W,S5X Toshiba Semiconductor and Storage

TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO220SIS

Toshiba Semiconductor and Storage

2,430 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 500mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK72A08N1,S4X Toshiba Semiconductor and Storage

TK72A08N1,S4X

MOSFET N-CH 75V 80A TO220SIS

Toshiba Semiconductor and Storage

19 -
Datasheet U-MOSVIII-H TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Ta) 10V 4.5mOhm @ 40A, 10V 4V @ 1mA 175 nC @ 10 V ±20V 8200 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK12A45D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

Toshiba Semiconductor and Storage

3,091 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK13E25D,S1X(S Toshiba Semiconductor and Storage

TK13E25D,S1X(S

MOSFET N-CH 250V 13A TO220-3

Toshiba Semiconductor and Storage

6,166 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Ta) 10V 250mOhm @ 6.5A, 10V 3.5V @ 1mA 25 nC @ 10 V ±20V 1100 pF @ 100 V - 102W (Tc) 150°C (TJ) - - Through Hole TO-220-3
TK10A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK10A55D(STA4,Q,M)

MOSFET N-CH 550V 10A TO220SIS

Toshiba Semiconductor and Storage

3,557 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPH1100CQ5,LQ Toshiba Semiconductor and Storage

TPH1100CQ5,LQ

150V UMOS10-H SOP ADVANCE

Toshiba Semiconductor and Storage

2,961 -
Datasheet U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Ta), 49A (Tc) 8V, 10V 11.1mOhm @ 24.5A, 10V 4.5V @ 800µA 38 nC @ 10 V ±20V 4400 pF @ 75 V - 3W (Ta), 180W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
TK72E12N1,S1X Toshiba Semiconductor and Storage

TK72E12N1,S1X

MOSFET N CH 120V 72A TO-220

Toshiba Semiconductor and Storage

6,686 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Ta) 10V 4.4mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 255W (Tc) 150°C (TJ) - - Through Hole TO-220-3
TK12A53D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A53D(STA4,Q,M)

MOSFET N-CH 525V 12A TO220SIS

Toshiba Semiconductor and Storage

2,379 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 12A (Ta) 10V 580mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK13A50DA(STA4,Q,M Toshiba Semiconductor and Storage

TK13A50DA(STA4,Q,M

MOSFET N-CH 500V 12.5A TO220SIS

Toshiba Semiconductor and Storage

13 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Ta) 10V 470mOhm @ 6.3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK12A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage

8,584 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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