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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK35A65W,S5X Toshiba Semiconductor and Storage

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

13 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK39N60X,S1F Toshiba Semiconductor and Storage

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

14 -
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK35N65W,S1F Toshiba Semiconductor and Storage

TK35N65W,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

5 -
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK62J60W,S1VQ Toshiba Semiconductor and Storage

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage

2 -
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TPC8134,LQ(S Toshiba Semiconductor and Storage

TPC8134,LQ(S

MOSFET P-CH 40V 5A 8SOP

Toshiba Semiconductor and Storage

7,056 -
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 5A (Ta) 4.5V, 10V 52mOhm @ 2.5A, 10V 2V @ 100µA 20 nC @ 10 V +20V, -25V 890 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
TK2Q60D(Q) Toshiba Semiconductor and Storage

TK2Q60D(Q)

MOSFET N-CH 600V 2A PW-MOLD2

Toshiba Semiconductor and Storage

8,512 -
Datasheet π-MOSVII TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
TPH2R903PL,L1Q Toshiba Semiconductor and Storage

TPH2R903PL,L1Q

PB-FPOWERMOSFETTRANSISTORSOP8-AD

Toshiba Semiconductor and Storage

7,519 -
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 960mW (Ta), 81W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,536 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8R2E06PL,S1X Toshiba Semiconductor and Storage

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

9,416 -
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C - - Through Hole TO-220
TK5A65W,S5X Toshiba Semiconductor and Storage

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

8,447 -
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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