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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK3A90E,S4X Toshiba Semiconductor and Storage

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

8,738 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage

21 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
TPC8133,LQ(S Toshiba Semiconductor and Storage

TPC8133,LQ(S

MOSFET P-CH 40V 9A 8SOP

Toshiba Semiconductor and Storage

20 -
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 15mOhm @ 4.5A, 10V 2V @ 500µA 64 nC @ 10 V +20V, -25V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
TK42E12N1,S1X Toshiba Semiconductor and Storage

TK42E12N1,S1X

MOSFET N CH 120V 88A TO-220

Toshiba Semiconductor and Storage

8 -
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 88A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220
TK5A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO220SIS

Toshiba Semiconductor and Storage

14 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A45DA(STA4,Q,M)

MOSFET N-CH 450V 6.5A TO220SIS

Toshiba Semiconductor and Storage

9,863 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 6.5A (Ta) 10V 1.2Ohm @ 3.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A90E,S4X Toshiba Semiconductor and Storage

TK5A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

25 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Ta) 10V 3.1Ohm @ 2.3A, 10V 4V @ 450µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A55DA(STA4,Q,M)

MOSFET N-CH 550V 5.5A TO220SIS

Toshiba Semiconductor and Storage

7,094 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 5.5A (Ta) 10V 1.48Ohm @ 2.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A50D(STA4,Q,M)

MOSFET N-CH 500V 7A TO220SIS

Toshiba Semiconductor and Storage

22 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK6A53D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A53D(STA4,Q,M)

MOSFET N-CH 525V 6A TO220SIS

Toshiba Semiconductor and Storage

2,947 -
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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